Highly Integrated VO2-based Antenna for Frequency Tunability at Millimeter-Wave Frequencies

L. HUITEMA; A. CRUNTEANU; H. WONG

doi:10.1109/IWAT.2016.7434795

Highly Integrated VO₂-based Antenna for Frequency Tunability at Millimeter-Wave Frequencies

L. HUITEMA
, A. CRUNTEANU
, H. WONG

State Key Laboratory of Terahertz and Millimeter Waves (City University of Hong Kong)

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

13 Citations (Scopus)

Abstract

We report the monolithic integration of a metal-insulator material (vanadium dioxide, VO2) for realizing a frequency tunable antenna operating around 30 GHz. The design of the device is based on a slot antenna excited by a microstrip line having a length that can be conveniently varied using a VO2-based switch. Compared to existing commercial solutions, the proposed switches show better electrical properties at high frequencies, with low losses (20 dB) up to 40 GHz. The simulation shows that the antenna can be tunable around 30 GHz, with discrete frequency operation while being highly integrated.

Original language	English
Title of host publication	2016 International Workshop on Antenna Technology (iWAT)
Publisher	IEEE
Pages	40-43
ISBN (Electronic)	9781509002672, 9781509002665
DOIs	https://doi.org/10.1109/IWAT.2016.7434795
Publication status	Published - Feb 2016
Event	IEEE International Workshop on Antenna Technology (iWAT 2016) - Hilton Cocoa Beach Oceanfront, Florida, United States Duration: 29 Feb 2016 → 2 Mar 2016

Conference

Conference	IEEE International Workshop on Antenna Technology (iWAT 2016)
Place	United States
City	Florida
Period	29/02/16 → 2/03/16

Research Keywords

High-frequency switching
Metal-insulator transition
Millimeter waves
Tunable slot antenna
Vanadium dioxide layers

Access Output

10.1109/IWAT.2016.7434795

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Cite this

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title = "Highly Integrated VO2-based Antenna for Frequency Tunability at Millimeter-Wave Frequencies",

abstract = "We report the monolithic integration of a metal-insulator material (vanadium dioxide, VO2) for realizing a frequency tunable antenna operating around 30 GHz. The design of the device is based on a slot antenna excited by a microstrip line having a length that can be conveniently varied using a VO2-based switch. Compared to existing commercial solutions, the proposed switches show better electrical properties at high frequencies, with low losses (20 dB) up to 40 GHz. The simulation shows that the antenna can be tunable around 30 GHz, with discrete frequency operation while being highly integrated.",

keywords = "High-frequency switching, Metal-insulator transition, Millimeter waves, Tunable slot antenna, Vanadium dioxide layers",

author = "L. HUITEMA and A. CRUNTEANU and H. WONG",

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doi = "10.1109/IWAT.2016.7434795",

language = "English",

pages = "40--43",

booktitle = "2016 International Workshop on Antenna Technology (iWAT)",

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Y1 - 2016/2

N2 - We report the monolithic integration of a metal-insulator material (vanadium dioxide, VO2) for realizing a frequency tunable antenna operating around 30 GHz. The design of the device is based on a slot antenna excited by a microstrip line having a length that can be conveniently varied using a VO2-based switch. Compared to existing commercial solutions, the proposed switches show better electrical properties at high frequencies, with low losses (20 dB) up to 40 GHz. The simulation shows that the antenna can be tunable around 30 GHz, with discrete frequency operation while being highly integrated.

AB - We report the monolithic integration of a metal-insulator material (vanadium dioxide, VO2) for realizing a frequency tunable antenna operating around 30 GHz. The design of the device is based on a slot antenna excited by a microstrip line having a length that can be conveniently varied using a VO2-based switch. Compared to existing commercial solutions, the proposed switches show better electrical properties at high frequencies, with low losses (20 dB) up to 40 GHz. The simulation shows that the antenna can be tunable around 30 GHz, with discrete frequency operation while being highly integrated.

KW - High-frequency switching

KW - Metal-insulator transition

KW - Millimeter waves

KW - Tunable slot antenna

KW - Vanadium dioxide layers

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M3 - RGC 32 - Refereed conference paper (with host publication)

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