Highly efficient field emission from indium-doped ZnO nanostructure on nanographene/macroporous electric conductive network

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

3 Scopus Citations
View graph of relations

Author(s)

  • Chi Zhang
  • Dayuan Xiong
  • Shaohui Xu
  • Wei Ouyang
  • Lianwei Wang

Detail(s)

Original languageEnglish
Pages (from-to)25-28
Journal / PublicationMaterials Letters
Volume222
Early online date29 Mar 2018
Publication statusPublished - 1 Jul 2018

Abstract

Indium-doped ZnO nanoparticles coated on nanographene/MECN enhance the field emission properties by avoiding electrostatic screen, providing more emitters, as well as introducing nanographene and indium doping. A simple hydrothermal method is developed to fabricate In-doped ZnO field emitters with different ratios of In and ZnO (5%, 10%, and 20%). The 10% In-ZnO shows a turn-on electric field as low as 1 V·μm−1 at a current density of 10 μA·cm−2, and the threshold field is 5.8 V·μm−1 at 1 mA·cm−2. The largest current density is 2.88 mA·cm−2, and the estimated β is 27918. The emission currents are very stable at high, medium, and low current densities with an average deviation of only 2.5%. The outstanding field emission performance indicates that In-doped ZnO coated on nanographene/MECN is an efficient field emitter and has large potential in displays, lightings, and sensors.

Research Area(s)

  • Indium doping, Macroporous electric conductive network (MECN), Nanographene, Nanoparticles, Sensors, ZnO

Citation Format(s)