High-angle tilt boundary graphene domain recrystallized from mobile hot-wire-assisted chemical vapor deposition system

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

16 Scopus Citations
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Author(s)

  • Jinsup Lee
  • Jinwook Baek
  • Gyeong Hee Ryu
  • Mi Jin Lee
  • Seran Oh
  • Seul Ki Hong
  • Bo-Hyun Kim
  • Seok-Hee Lee
  • Byung Jin Cho
  • Zonghoon Lee

Detail(s)

Original languageEnglish
Pages (from-to)4352-4359
Journal / PublicationNano Letters
Volume14
Issue number8
Online published30 Jun 2014
Publication statusPublished - 13 Aug 2014
Externally publishedYes

Abstract

Crystallization of materials has attracted research interest for a long time, and its mechanisms in three-dimensional materials have been well studied. However, crystallization of two-dimensional (2D) materials is yet to be challenged. Clarifying the dynamics underlying growth of 2D materials will provide the insight for the potential route to synthesize large and highly crystallized 2D domains with low defects. Here, we present the growth dynamics and recrystallization of 2D material graphene under a mobile hot-wire assisted chemical vapor deposition (MHW-CVD) system. Under local but sequential heating by MHW-CVD system, the initial nucleation of nanocrystalline graphenes, which was not extended into the growth stage due to the insufficient thermal energy, took a recrystallization and converted into a grand single crystal domain. During this process, the stitching-like healing of graphene was also observed. The local but sequential endowing thermal energy to nanocrystalline graphenes enabled us to simultaneously reveal the recrystallization and healing dynamics in graphene growth, which suggests an alternative route to synthesize a highly crystalline and large domain size graphene. Also, this recrystallization and healing of 2D nanocrystalline graphenes offers an interesting insight on the growth mechanism of 2D materials.

Research Area(s)

  • chemical vapor deposition, global domain, graphene, high-angle tilt boundary, recrystallization

Citation Format(s)

High-angle tilt boundary graphene domain recrystallized from mobile hot-wire-assisted chemical vapor deposition system. / Lee, Jinsup; Baek, Jinwook; Ryu, Gyeong Hee; Lee, Mi Jin; Oh, Seran; Hong, Seul Ki; Kim, Bo-Hyun; Lee, Seok-Hee; Cho, Byung Jin; Lee, Zonghoon; Jeon, Seokwoo.

In: Nano Letters, Vol. 14, No. 8, 13.08.2014, p. 4352-4359.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal