High voltage pulser with a fast fall-time for plasma immersion ion implantation
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
Original language | English |
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Article number | 45102 |
Journal / Publication | Review of Scientific Instruments |
Volume | 82 |
Issue number | 4 |
Publication status | Published - Apr 2011 |
Link(s)
Abstract
A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 s, compared to a fall time of 80 s if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable. © 2011 American Institute of Physics.
Citation Format(s)
High voltage pulser with a fast fall-time for plasma immersion ion implantation. / Zhu, Zongtao; Gong, Chunzhi; Tian, Xiubo et al.
In: Review of Scientific Instruments, Vol. 82, No. 4, 45102, 04.2011.
In: Review of Scientific Instruments, Vol. 82, No. 4, 45102, 04.2011.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review