High voltage pulser with a fast fall-time for plasma immersion ion implantation

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

4 Scopus Citations
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Author(s)

  • Zongtao Zhu
  • Chunzhi Gong
  • Xiubo Tian
  • Shiqin Yang
  • Ricky K. Y. Fu

Detail(s)

Original languageEnglish
Article number45102
Journal / PublicationReview of Scientific Instruments
Volume82
Issue number4
Publication statusPublished - Apr 2011

Abstract

A novel high voltage (HV) modulator that offers a short fall time to minimize sputtering effects and allow more precise control of the incident ion fluence in plasma immersion ion implantation is described. The use of 36 insulated-gate bipolar transistors in the 30 kV hard-tube pulser reduces the HV fall time to 3.5 s, compared to a fall time of 80 s if a pull-down resister is used. The voltage balance is achieved by a voltage-balancing resistor, clamped capacitance, and the synchronization of drive signals. Compared to the traditional method employing a pull-down resister or an additional hard tube, our design consumes less power and is more economical and reliable. © 2011 American Institute of Physics.

Citation Format(s)

High voltage pulser with a fast fall-time for plasma immersion ion implantation. / Zhu, Zongtao; Gong, Chunzhi; Tian, Xiubo; Yang, Shiqin; Fu, Ricky K. Y.; Chu, Paul K.

In: Review of Scientific Instruments, Vol. 82, No. 4, 45102, 04.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review