High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Wen-Yuan Chang
  • Hsin-Wei Huang
  • Wei-Ting Wang
  • Cheng-Hao Hou
  • Yu-Lun Chueh

Detail(s)

Original languageEnglish
Pages (from-to)G29-G32
Journal / PublicationJournal of the Electrochemical Society
Volume159
Issue number3
Online published12 Jan 2012
Publication statusPublished - 2012
Externally publishedYes

Abstract

This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The Cr/ZnO/Pt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrOx at the Cr/ZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrodeoxide interface.

Citation Format(s)

High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device. / Chang, Wen-Yuan; Huang, Hsin-Wei; Wang, Wei-Ting; Hou, Cheng-Hao; Chueh, Yu-Lun; He, Jr-Hau.

In: Journal of the Electrochemical Society, Vol. 159, No. 3, 2012, p. G29-G32.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review