High Uniformity Ferroelectric MoS2 Nonvolatile Memory Array

Chunyang Li; Lu Li; Zhongyi Li; Fanqing Zhang; Lixin Dong; Jing Zhao

doi:10.1109/3M-NANO56083.2022.9941686

High Uniformity Ferroelectric MoS₂Nonvolatile Memory Array

Chunyang Li, Lu Li, Zhongyi Li, Fanqing Zhang, Lixin Dong^*, Jing Zhao^*

^*Corresponding author for this work

Department of Biomedical Engineering

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Ferroelectric field effect transistor (FeFET) based on two-dimensional (2D) materials is centered great expectations for next-generation non-volatile memory devices owing to its excellent properties. In this paper, we fabricated monolayer MoS₂ FeFET devices array through coupling ferroelectric P(VDF-TrFE) as the dielectric layer. The MoS₂ FeFET device demonstrated excellent storage performance, including high on/off current ratios (>10⁶), a broad memory window (~15 V), long endurance (>200 cycles), and retention time (>1000 s). In additional, attributed to the chemical vapor deposition (CVD) synthesis of large-scale uniform Mos₂, the devices array shows consistent characteristics, which suggest huge potential integrated circuit applications in the future.

Original language	English
Title of host publication	2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (IEEE 3M-NANO 2022)
Subtitle of host publication	Conference Proceedings
Publisher	IEEE
Pages	247-251
ISBN (Electronic)	978-1-6654-7543-3
DOIs	https://doi.org/10.1109/3M-NANO56083.2022.9941686
Publication status	Published - 2022
Event	2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2022 - Tianjin, China Duration: 8 Aug 2022 → 12 Aug 2022

Publication series

Name	IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO - Proceedings

Conference

Conference	2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2022
Place	China
City	Tianjin
Period	8/08/22 → 12/08/22

Research Keywords

devices array
ferroelectric field effect transistor
large-scale
non-volatile memory
P(VDF-TrFE)

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10.1109/3M-NANO56083.2022.9941686

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Cite this

Li, C., Li, L., Li, Z., Zhang, F., Dong, L., & Zhao, J. (2022). High Uniformity Ferroelectric MoS₂Nonvolatile Memory Array. In 2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (IEEE 3M-NANO 2022): Conference Proceedings (pp. 247-251). (IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO - Proceedings). IEEE. https://doi.org/10.1109/3M-NANO56083.2022.9941686

Li, Chunyang ; Li, Lu ; Li, Zhongyi et al. / High Uniformity Ferroelectric MoS₂Nonvolatile Memory Array. 2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (IEEE 3M-NANO 2022): Conference Proceedings. IEEE, 2022. pp. 247-251 (IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO - Proceedings).

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title = "High Uniformity Ferroelectric MoS2 Nonvolatile Memory Array",

abstract = "Ferroelectric field effect transistor (FeFET) based on two-dimensional (2D) materials is centered great expectations for next-generation non-volatile memory devices owing to its excellent properties. In this paper, we fabricated monolayer MoS2 FeFET devices array through coupling ferroelectric P(VDF-TrFE) as the dielectric layer. The MoS2 FeFET device demonstrated excellent storage performance, including high on/off current ratios (>106), a broad memory window (~15 V), long endurance (>200 cycles), and retention time (>1000 s). In additional, attributed to the chemical vapor deposition (CVD) synthesis of large-scale uniform Mos2, the devices array shows consistent characteristics, which suggest huge potential integrated circuit applications in the future.",

keywords = "devices array, ferroelectric field effect transistor, large-scale, non-volatile memory, P(VDF-TrFE)",

author = "Chunyang Li and Lu Li and Zhongyi Li and Fanqing Zhang and Lixin Dong and Jing Zhao",

year = "2022",

doi = "10.1109/3M-NANO56083.2022.9941686",

language = "English",

series = "IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO - Proceedings",

publisher = "IEEE",

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booktitle = "2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (IEEE 3M-NANO 2022)",

address = "United States",

note = "2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2022 ; Conference date: 08-08-2022 Through 12-08-2022",

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Li, C, Li, L, Li, Z, Zhang, F, Dong, L & Zhao, J 2022, High Uniformity Ferroelectric MoS₂Nonvolatile Memory Array. in 2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (IEEE 3M-NANO 2022): Conference Proceedings. IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO - Proceedings, IEEE, pp. 247-251, 2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2022, Tianjin, China, 8/08/22. https://doi.org/10.1109/3M-NANO56083.2022.9941686

High Uniformity Ferroelectric MoS₂Nonvolatile Memory Array. / Li, Chunyang; Li, Lu; Li, Zhongyi et al.
2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (IEEE 3M-NANO 2022): Conference Proceedings. IEEE, 2022. p. 247-251 (IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO - Proceedings).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - High Uniformity Ferroelectric MoS2 Nonvolatile Memory Array

AU - Li, Chunyang

AU - Li, Lu

AU - Li, Zhongyi

AU - Zhang, Fanqing

AU - Dong, Lixin

AU - Zhao, Jing

PY - 2022

Y1 - 2022

N2 - Ferroelectric field effect transistor (FeFET) based on two-dimensional (2D) materials is centered great expectations for next-generation non-volatile memory devices owing to its excellent properties. In this paper, we fabricated monolayer MoS2 FeFET devices array through coupling ferroelectric P(VDF-TrFE) as the dielectric layer. The MoS2 FeFET device demonstrated excellent storage performance, including high on/off current ratios (>106), a broad memory window (~15 V), long endurance (>200 cycles), and retention time (>1000 s). In additional, attributed to the chemical vapor deposition (CVD) synthesis of large-scale uniform Mos2, the devices array shows consistent characteristics, which suggest huge potential integrated circuit applications in the future.

AB - Ferroelectric field effect transistor (FeFET) based on two-dimensional (2D) materials is centered great expectations for next-generation non-volatile memory devices owing to its excellent properties. In this paper, we fabricated monolayer MoS2 FeFET devices array through coupling ferroelectric P(VDF-TrFE) as the dielectric layer. The MoS2 FeFET device demonstrated excellent storage performance, including high on/off current ratios (>106), a broad memory window (~15 V), long endurance (>200 cycles), and retention time (>1000 s). In additional, attributed to the chemical vapor deposition (CVD) synthesis of large-scale uniform Mos2, the devices array shows consistent characteristics, which suggest huge potential integrated circuit applications in the future.

KW - devices array

KW - ferroelectric field effect transistor

KW - large-scale

KW - non-volatile memory

KW - P(VDF-TrFE)

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U2 - 10.1109/3M-NANO56083.2022.9941686

DO - 10.1109/3M-NANO56083.2022.9941686

M3 - RGC 32 - Refereed conference paper (with host publication)

T3 - IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO - Proceedings

SP - 247

EP - 251

BT - 2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (IEEE 3M-NANO 2022)

PB - IEEE

T2 - 2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2022

Y2 - 8 August 2022 through 12 August 2022

ER -

Li C, Li L, Li Z, Zhang F, Dong L, Zhao J. High Uniformity Ferroelectric MoS₂Nonvolatile Memory Array. In 2022 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (IEEE 3M-NANO 2022): Conference Proceedings. IEEE. 2022. p. 247-251. (IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO - Proceedings). Epub 2022 Nov 16. doi: 10.1109/3M-NANO56083.2022.9941686