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High Throughput Discovery of Effective Metal Doping in FeVO4 for Photoelectrochemical Water Splitting

  • Thi Hiep Nguyen
  • , Mengyuan Zhang
  • , Wilman Septina
  • , Mahmoud G. Ahmed
  • , Ying Fan Tay
  • , Fatwa F. Abdi
  • , Lydia Helena Wong*
  • *Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

FeVO4 is a potential photoanode candidate with favorable bandgap energy for absorbing visible light in the solar spectrum. However, the achieved photocurrents are still much lower than the theoretical photocurrent due to poor bulk carrier separation efficiency. Herein, the aim is to improve FeVO4 charge transport properties by searching for suitable metal doping using combinatorial methods. Thin-film FeVO4 libraries with different doping ratios of Zn, Ni, Cr, Mo, and W are fabricated on fluorine doped tin oxide substrates using combinatorial inkjet printing and their photoelectrochemical properties screened using photoscanning droplet cell. Mo and W doping show higher current density compared with undoped FeVO4; whereas the photocurrent decreases for Ni- and Zn-doped samples. The best photocurrent is achieved with 7% doping ratio of Cr. Cr is discovered as a promising dopant for the first time, which is more effective than reported Mo or W for FeVO4 photoanode. The replacement of Cr3+ to Fe3+ in FeVO4 crystal lattice helps to mainly improve the catalytic activity for charge transfer, which results in the enhancement of photoresponse of the FeVO4 photoanode. © 2020 Wiley-VCH GmbH
Original languageEnglish
Article number2000437
JournalSolar RRL
Volume4
Issue number12
Online published9 Oct 2020
DOIs
Publication statusPublished - Dec 2020
Externally publishedYes

Research Keywords

  • FeVO4 thin films
  • inkjet printing
  • metal doping
  • photoelectrochemical water splitting

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