TY - GEN
T1 - High temperature piezoelectric single crystal GdCa4O(BO 3)3 for sensor application
AU - Frantz, Eric
AU - Snyder, David W.
AU - Everson, William
AU - Randi, Joseph
AU - Zhang, Shujun
AU - Shrout, Thomas R.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 2008
Y1 - 2008
N2 - High Temperature piezoelectric single crystals ReCa4O(BO 3)3 -ReCOB (Re: rare earth element, such as Gd and Y) are readily grown by the Czochralski method. The melting temperature of these crystals was found to be around 1500°C, before which, no phase transitions occur. The dielectric constant and dielectric loss values for GdCOB were studied as a function of temperature. Electromechanical coupling characteristics of the GdCOB crystal were investigated for temperatures up to 1000°C, showing coupling keff up to 12% at room temperature with little change for temperatures up to 1000°C. High resistivities on the order of 108 Ω-cm at 700°C would contribute to low power requirements for electronics applications. The ability to operate these materials at high temperatures with stable dielectric and electromechanical coupling factors and low power requirements makes GdCOB an ideal candidate for temperature and resonant sensors in harsh environments.
AB - High Temperature piezoelectric single crystals ReCa4O(BO 3)3 -ReCOB (Re: rare earth element, such as Gd and Y) are readily grown by the Czochralski method. The melting temperature of these crystals was found to be around 1500°C, before which, no phase transitions occur. The dielectric constant and dielectric loss values for GdCOB were studied as a function of temperature. Electromechanical coupling characteristics of the GdCOB crystal were investigated for temperatures up to 1000°C, showing coupling keff up to 12% at room temperature with little change for temperatures up to 1000°C. High resistivities on the order of 108 Ω-cm at 700°C would contribute to low power requirements for electronics applications. The ability to operate these materials at high temperatures with stable dielectric and electromechanical coupling factors and low power requirements makes GdCOB an ideal candidate for temperature and resonant sensors in harsh environments.
KW - High temperature
KW - Oxoborate
KW - Piezoelectric
KW - Resistivity
UR - https://www.scopus.com/pages/publications/84879874015
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84879874015&origin=recordpage
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 9781615670918
T3 - International Conference and Exhibition on High Temperature Electronics 2008, HiTEC 2008
SP - 308
EP - 311
BT - International Conference and Exhibition on High Temperature Electronics 2008, HiTEC 2008
T2 - IMAPS High Temperature Electronics Conference, HiTEC 2008
Y2 - 12 May 2008 through 15 May 2008
ER -