High temperature capacitors using a BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system

Jong Bong Lim; Shujun Zhang; Thomas R. Shrout

doi:10.1007/s13391-011-0311-8

High temperature capacitors using a BiScO₃-BaTiO₃-(K_1/2Bi_1/2)TiO₃ ternary system

Jong Bong Lim
, Shujun Zhang
, Thomas R. Shrout

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

23 Citations (Scopus)

Abstract

BiScO₃-BaTiO₃ with (K_1/2Bi_1/2)TiO₃ [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCe{open}s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm³ at 100 kV/cm for the BSBT-KBT20. © 2011 The Korean Institute of Metals and Materials and Springer Netherlands.

Original language	English
Pages (from-to)	71-75
Journal	Electronic Materials Letters
Volume	7
Issue number	1
DOIs	https://doi.org/10.1007/s13391-011-0311-8
Publication status	Published - Mar 2011
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

(K1/2Bi1/2)TiO3
BaTiO3
capacitors
energy storage

Access Output

10.1007/s13391-011-0311-8

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

@article{50996211248b4fe790065a8bc4f190b9,

title = "High temperature capacitors using a BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system",

abstract = "BiScO3-BaTiO3 with (K1/2Bi1/2)TiO3 [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCe\{open\}s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm3 at 100 kV/cm for the BSBT-KBT20. {\textcopyright} 2011 The Korean Institute of Metals and Materials and Springer Netherlands.",

keywords = "(K1/2Bi1/2)TiO3, BaTiO3, capacitors, energy storage",

author = "Lim, \{Jong Bong\} and Shujun Zhang and Shrout, \{Thomas R.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2011",

month = mar,

doi = "10.1007/s13391-011-0311-8",

language = "English",

volume = "7",

pages = "71--75",

journal = "Electronic Materials Letters",

issn = "1738-8090",

publisher = "Springer Netherlands",

number = "1",

}

TY - JOUR

T1 - High temperature capacitors using a BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system

AU - Lim, Jong Bong

AU - Zhang, Shujun

AU - Shrout, Thomas R.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2011/3

Y1 - 2011/3

N2 - BiScO3-BaTiO3 with (K1/2Bi1/2)TiO3 [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCe{open}s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm3 at 100 kV/cm for the BSBT-KBT20. © 2011 The Korean Institute of Metals and Materials and Springer Netherlands.

AB - BiScO3-BaTiO3 with (K1/2Bi1/2)TiO3 [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCe{open}s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm3 at 100 kV/cm for the BSBT-KBT20. © 2011 The Korean Institute of Metals and Materials and Springer Netherlands.

KW - (K1/2Bi1/2)TiO3

KW - BaTiO3

KW - capacitors

KW - energy storage

UR - https://www.scopus.com/pages/publications/79954568595

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-79954568595&origin=recordpage

U2 - 10.1007/s13391-011-0311-8

DO - 10.1007/s13391-011-0311-8

M3 - RGC 21 - Publication in refereed journal

SN - 1738-8090

VL - 7

SP - 71

EP - 75

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 1

ER -