High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system

Elliott R. Brown; C. D. Parker; Arthur R. Calawa; M. J. Manfra; T. C. L. Gerh Sollner; Chang Lee Chen; Stella W. Pang; K. M. Molvar

doi:10.1117/12.20913

High-speed resonant-tunneling diodes made from the In_0.53Ga_0.47As/AlAs material system

Elliott R. Brown
, C. D. Parker
, Arthur R. Calawa
, M. J. Manfra
, T. C. L. Gerh Sollner
, Chang Lee Chen
, Stella W. Pang
, K. M. Molvar

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

16 Citations (Scopus)

Abstract

New double-barrier resonant-tunneling diodes have been fabricated in the pseudomorphic In_0.53Ga_0.47As/AlAs material system that have peak current densities exceeding 1×10⁵ A cm^-2 and peak-to-valley current ratios of approximately 10 at room temperature. One of these diodes yielded oscillations up to 125 GHz, but did not oscillate at higher frequencies because of a large device capacitance. A device with a much lower capacitance is estimated to have a maximum oscillation frequency of 932 GHz and a voltage rise time of 1.5 ps in switching from the peak bias point to the valley bias point. Other reported In_0.53Ga_0.47As/AlAs diodes are analyzed and yield theoretical maximum oscillation frequencies over 1 THz and rise times as low as 0.3 ps.

Original language	English
Title of host publication	High-Speed Electronics and Device Scaling
Editors	Lester Fuess Eastman
Publisher	SPIE
Pages	122-135
ISBN (Print)	819403393, 9780819403391
DOIs	https://doi.org/10.1117/12.20913
Publication status	Published - 1 Aug 1990
Externally published	Yes
Event	SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Devices Applications - San Diego, CA, United States Duration: 17 Mar 1990 → 21 Mar 1990

Publication series

Name	Proceedings of SPIE
Volume	1288
ISSN (Electronic)	0277-786X

Conference

Conference	SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Devices Applications
Place	United States
City	San Diego, CA
Period	17/03/90 → 21/03/90

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Brown, E. R., Parker, C. D., Calawa, A. R., Manfra, M. J., Sollner, T. C. L. G., Chen, C. L., Pang, S. W., & Molvar, K. M. (1990). High-speed resonant-tunneling diodes made from the In_0.53Ga_0.47As/AlAs material system. In L. F. Eastman (Ed.), High-Speed Electronics and Device Scaling (pp. 122-135). (Proceedings of SPIE; Vol. 1288). SPIE. https://doi.org/10.1117/12.20913

@inproceedings{4cfa4289c937424995ae77d6ccb13f47,

title = "High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system",

abstract = "New double-barrier resonant-tunneling diodes have been fabricated in the pseudomorphic In0.53Ga0.47As/AlAs material system that have peak current densities exceeding 1×105 A cm-2 and peak-to-valley current ratios of approximately 10 at room temperature. One of these diodes yielded oscillations up to 125 GHz, but did not oscillate at higher frequencies because of a large device capacitance. A device with a much lower capacitance is estimated to have a maximum oscillation frequency of 932 GHz and a voltage rise time of 1.5 ps in switching from the peak bias point to the valley bias point. Other reported In0.53Ga0.47As/AlAs diodes are analyzed and yield theoretical maximum oscillation frequencies over 1 THz and rise times as low as 0.3 ps.",

author = "Brown, \{Elliott R.\} and Parker, \{C. D.\} and Calawa, \{Arthur R.\} and Manfra, \{M. J.\} and Sollner, \{T. C. L. Gerh\} and Chen, \{Chang Lee\} and Pang, \{Stella W.\} and Molvar, \{K. M.\}",

year = "1990",

month = aug,

day = "1",

doi = "10.1117/12.20913",

language = "English",

isbn = "819403393",

series = "Proceedings of SPIE",

publisher = "SPIE",

pages = "122--135",

editor = "Eastman, \{Lester Fuess\}",

booktitle = "High-Speed Electronics and Device Scaling",

address = "United States",

note = "SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Devices Applications ; Conference date: 17-03-1990 Through 21-03-1990",

}

Brown, ER, Parker, CD, Calawa, AR, Manfra, MJ, Sollner, TCLG, Chen, CL, Pang, SW & Molvar, KM 1990, High-speed resonant-tunneling diodes made from the In_0.53Ga_0.47As/AlAs material system. in LF Eastman (ed.), High-Speed Electronics and Device Scaling. Proceedings of SPIE, vol. 1288, SPIE, pp. 122-135, SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, San Diego, CA, United States, 17/03/90. https://doi.org/10.1117/12.20913

High-speed resonant-tunneling diodes made from the In_0.53Ga_0.47As/AlAs material system. / Brown, Elliott R.; Parker, C. D.; Calawa, Arthur R. et al.
High-Speed Electronics and Device Scaling. ed. / Lester Fuess Eastman. SPIE, 1990. p. 122-135 (Proceedings of SPIE; Vol. 1288).

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system

AU - Brown, Elliott R.

AU - Parker, C. D.

AU - Calawa, Arthur R.

AU - Manfra, M. J.

AU - Sollner, T. C. L. Gerh

AU - Chen, Chang Lee

AU - Pang, Stella W.

AU - Molvar, K. M.

PY - 1990/8/1

Y1 - 1990/8/1

N2 - New double-barrier resonant-tunneling diodes have been fabricated in the pseudomorphic In0.53Ga0.47As/AlAs material system that have peak current densities exceeding 1×105 A cm-2 and peak-to-valley current ratios of approximately 10 at room temperature. One of these diodes yielded oscillations up to 125 GHz, but did not oscillate at higher frequencies because of a large device capacitance. A device with a much lower capacitance is estimated to have a maximum oscillation frequency of 932 GHz and a voltage rise time of 1.5 ps in switching from the peak bias point to the valley bias point. Other reported In0.53Ga0.47As/AlAs diodes are analyzed and yield theoretical maximum oscillation frequencies over 1 THz and rise times as low as 0.3 ps.

AB - New double-barrier resonant-tunneling diodes have been fabricated in the pseudomorphic In0.53Ga0.47As/AlAs material system that have peak current densities exceeding 1×105 A cm-2 and peak-to-valley current ratios of approximately 10 at room temperature. One of these diodes yielded oscillations up to 125 GHz, but did not oscillate at higher frequencies because of a large device capacitance. A device with a much lower capacitance is estimated to have a maximum oscillation frequency of 932 GHz and a voltage rise time of 1.5 ps in switching from the peak bias point to the valley bias point. Other reported In0.53Ga0.47As/AlAs diodes are analyzed and yield theoretical maximum oscillation frequencies over 1 THz and rise times as low as 0.3 ps.

UR - https://www.scopus.com/pages/publications/0025671719

UR - https://www.scopus.com/pages/publications/0025671719#tab=impact

U2 - 10.1117/12.20913

DO - 10.1117/12.20913

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 819403393

SN - 9780819403391

T3 - Proceedings of SPIE

SP - 122

EP - 135

BT - High-Speed Electronics and Device Scaling

A2 - Eastman, Lester Fuess

PB - SPIE

T2 - SPIE Symposium on Advances in Semiconductors and Superconductors: Physics Toward Devices Applications

Y2 - 17 March 1990 through 21 March 1990

ER -