High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications

Abhishek Pathak; Guan Ru Chiou; Narsinga Rao Gade; Muhammad Usman; Shruti Mendiratta; Tzuoo-Tsair Luo; Tien Wen Tseng; Jenq-Wei Chen; Fu-Rong Chen; Kuei-Hsien Chen; Li-Chyong Chen; Kuang-Lieh Lu

doi:10.1021/acsami.7b03959

Author(s)

Abhishek Pathak
Guan Ru Chiou
Narsinga Rao Gade
Muhammad Usman
Shruti Mendiratta
Tzuoo-Tsair Luo
Tien Wen Tseng
Jenq-Wei Chen
Kuei-Hsien Chen
Li-Chyong Chen
Kuang-Lieh Lu

Detail(s)

Original language	English
Pages (from-to)	21872-21878
Journal / Publication	ACS Applied Materials and Interfaces
Volume	9
Issue number	26
Online published	8 Jun 2017
Publication status	Published - 5 Jul 2017
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1021/acsami.7b03959 Final Published version
	Check@CityULib
Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-85021917409&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(4d7bac87-de13-4ef4-8f56-1a50a0e71f15).html

Abstract

The self-assembly of a samarium-based metal-organic framework [Sm₂(bhc)(H₂O)₆]_n (1) in good yield was achieved by reacting Sm(NO₃)₃·6H₂O with benzenehexacarboxylic acid (bhc) in a mixture of H₂O-EtOH under hydrothermal conditions. A structural analysis showed that compound 1 crystallized in a space group of Pnmn and adopted a 3D structure with (4,8) connected nets. Temperature dependent dielectric measurements showed that compound 1 behaves as a high dielectric material with a high dielectric constant (κ = 45.1) at 5 kHz and 310 K, which is comparable to the values for some of the most commonly available dielectric inorganic metal oxides such as Sm₂O₃, Ta₂O₅, HfO₂, and ZrO₂. In addition, electrical measurements of 1 revealed an electrical conductivity of about 2.15 × 10^-7 S/cm at a frequency of 5 kHz with a low leakage current (I_leakage = 8.13 × 10^-12 Amm^-2). Dielectric investigations of the Sm-based MOF provide an effective path for the development of high dielectric materials in the future.

Research Area(s)

dielectric, high-κ, hydrothermal, metal-organic framework, samarium

Citation Format(s)

[ RIS ] [ BibTeX ]

High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications. / Pathak, Abhishek; Chiou, Guan Ru; Gade, Narsinga Rao et al.
In: ACS Applied Materials and Interfaces, Vol. 9, No. 26, 05.07.2017, p. 21872-21878.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Pathak, A, Chiou, GR, Gade, NR, Usman, M, Mendiratta, S, Luo, T-T, Tseng, TW, Chen, J-W, Chen, F-R, Chen, K-H, Chen, L-C & Lu, K-L 2017, 'High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications', ACS Applied Materials and Interfaces, vol. 9, no. 26, pp. 21872-21878. https://doi.org/10.1021/acsami.7b03959

Pathak, A., Chiou, G. R., Gade, N. R., Usman, M., Mendiratta, S., Luo, T.-T., Tseng, T. W., Chen, J.-W., Chen, F.-R., Chen, K.-H., Chen, L.-C., & Lu, K.-L. (2017). High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications. ACS Applied Materials and Interfaces, 9(26), 21872-21878. https://doi.org/10.1021/acsami.7b03959

Pathak A, Chiou GR, Gade NR, Usman M, Mendiratta S, Luo TT et al. High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications. ACS Applied Materials and Interfaces. 2017 Jul 5;9(26):21872-21878. Epub 2017 Jun 8. doi: 10.1021/acsami.7b03959

Pathak, Abhishek ; Chiou, Guan Ru ; Gade, Narsinga Rao et al. / High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications. In: ACS Applied Materials and Interfaces. 2017 ; Vol. 9, No. 26. pp. 21872-21878.