High reactivity of silicon suboxide clusters
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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Related Research Unit(s)
Detail(s)
Original language | English |
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Article number | 113304 |
Pages (from-to) | 1133041-1133044 |
Journal / Publication | Physical Review B - Condensed Matter and Materials Physics |
Volume | 64 |
Issue number | 11 |
Publication status | Published - 15 Sep 2001 |
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Abstract
The recent silicon-oxide-assisted formation of Si nanostructures has been studied based on quantum-mechanical calculations of SinOm (n,m = 1-8) clusters. We found that (1) energetically the most favorable small silicon-oxide clusters have O atomic ratios at around 0.6, and (2) remarkably high reactivity at the Si atoms exists in silicon suboxide SinOm clusters with 2n > m. The results show that the formation of Si-Si bonds is preferred and thus facilitates the nucleation of Si nanostructures when silicon suboxide clusters come together or stack to a substrate.
Citation Format(s)
High reactivity of silicon suboxide clusters. / Zhang, R. Q.; Chu, T. S.; Cheung, H. F.; Wang, N.; Lee, S. T.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 11, 113304, 15.09.2001, p. 1133041-1133044.Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review