High reactivity of silicon suboxide clusters

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Article number113304
Pages (from-to)1133041-1133044
Journal / PublicationPhysical Review B - Condensed Matter and Materials Physics
Volume64
Issue number11
Publication statusPublished - 15 Sep 2001

Abstract

The recent silicon-oxide-assisted formation of Si nanostructures has been studied based on quantum-mechanical calculations of SinOm (n,m = 1-8) clusters. We found that (1) energetically the most favorable small silicon-oxide clusters have O atomic ratios at around 0.6, and (2) remarkably high reactivity at the Si atoms exists in silicon suboxide SinOm clusters with 2n > m. The results show that the formation of Si-Si bonds is preferred and thus facilitates the nucleation of Si nanostructures when silicon suboxide clusters come together or stack to a substrate.

Citation Format(s)

High reactivity of silicon suboxide clusters. / Zhang, R. Q.; Chu, T. S.; Cheung, H. F.; Wang, N.; Lee, S. T.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 64, No. 11, 113304, 15.09.2001, p. 1133041-1133044.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review