High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Y. R. Cho
  • S. K. Lee
  • W. Zhou
  • Z. P. Wan
  • Chi-Nhan Ha Thuc
  • Y. G. Son

Detail(s)

Original languageEnglish
Pages (from-to)180-183
Journal / PublicationMaterials Letters
Volume78
Publication statusPublished - 1 Jul 2012

Abstract

High quality Al-N co-doped ZnO (AZO:N) nanorods were synthesized using an ammonia-assisted hydrothermal method. The AZO:N nanorods exhibited p-type characteristics according to Hall Effect measurements, revealing low resistivity in the order of 10 - 2 Ωcm. At room temperature, the electrical properties of the AZO:N nanorod showed a hole concentration, hole mobility and resistivity of 2.83 × 10 18-2.28 × 10 19 cm - 3, 2.19-2.86 cm 2/Vs, and 1.01-9.58 × 10 - 2 Ωcm, respectively. The I-V measurements of the p-n junction (p-AZO:N nanorods/n-Si) showed rectifying I-V characteristics, confirming that these AZO:N nanorods exhibit p-type conductivity. This study opens the possibility of developing highly conducting p-type AZO nanorods for optoelectronic devices. The effect of the ammonia concentration on the structural and electrical properties of AZO:N nanorods is discussed. © 2012 Elsevier B.V. All rights reserved.

Research Area(s)

  • Al-doped ZnO, Ammonia-assisted, Hydrothermal growth, Nanorods, p-Type

Citation Format(s)

High quality p-type N-doped AZO nanorod arrays by an ammonia-assisted hydrothermal method. / Xia, Q. X.; Hui, K. S.; Hui, K. N.; Hwang, D. H.; Singh, Jai; Cho, Y. R.; Lee, S. K.; Zhou, W.; Wan, Z. P.; Ha Thuc, Chi-Nhan; Son, Y. G.

In: Materials Letters, Vol. 78, 01.07.2012, p. 180-183.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review