High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

W. J. Zhang; X. Jiang; S. Matsumoto

doi:10.1063/1.1428762

High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

W. J. Zhang, X. Jiang, S. Matsumoto

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

44 Citations (Scopus)

Abstract

Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface. © 2001 American Institute of Physics.

Original language	English
Pages (from-to)	4530-4532
Journal	Applied Physics Letters
Volume	79
Issue number	27
DOIs	https://doi.org/10.1063/1.1428762
Publication status	Published - 31 Dec 2001
Externally published	Yes

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title = "High-quality, faceted cubic boron nitride films grown by chemical vapor deposition",

abstract = "Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface. {\textcopyright} 2001 American Institute of Physics.",

author = "Zhang, {W. J.} and X. Jiang and S. Matsumoto",

year = "2001",

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T1 - High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

AU - Zhang, W. J.

AU - Jiang, X.

AU - Matsumoto, S.

PY - 2001/12/31

Y1 - 2001/12/31

N2 - Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface. © 2001 American Institute of Physics.

AB - Thick cubic boron nitride (cBN) films showing clear crystal facets were achieved by chemical vapor deposition. The films show the highest crystallinity of cBN films ever achieved from gas phase. Clear evidence for the growth via a chemical route is obtained. A growth mechanism is suggested, in which fluorine preferentially etches hBN and stabilizes the cBN surface. Ion bombardment of proper energy activates the cBN surface bonded with fluorine so as to enhance the bonding probability of nitrogen-containing species on the F-stabilized B (111) surface. © 2001 American Institute of Physics.

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U2 - 10.1063/1.1428762

DO - 10.1063/1.1428762

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 79

SP - 4530

EP - 4532

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 27

ER -

High-quality, faceted cubic boron nitride films grown by chemical vapor deposition

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