High performance photomultiplication perovskite photodetectors with PC₆₀BM and NPB as the interlayers

Organic-inorganic hybrid perovskites have attracted more attention as successful light harvesting materials for solution-processed semiconductors and exhibit remarkable optoelectronic properties. Here photomultiplication-type photodetectors based on perovskite CH₃NH₃PbI₃ are demonstrated. By introducing suitable interlayers at the CH₃NH₃PbI₃/electrode interfaces, the performance of the photodetector is significantly improved. The optimized device with a N,N′-di(naphthalene-1-yl)-N,N′-diphenylbenzidine anode interface layer and [6,6]-phenyl-C₆₀-butyric acidmethyl ester cathode interface layer shows a broadband response with a high photocurrent gain of about 177 and a high detectivity of 4.6 × 10¹³ Jones, which are higher than the reference device. Besides, the response speed of the device is also increased. The improvement is attributed to the improved charge carrier collection efficiency and suppressed dark current of the device.