High performance organic field-effect transistor with oxide/metal bilayer electrodes

Xinge Yu; Junsheng Yu; Wei Huang; Shijiao Han; Yadong Jiang

doi:10.1117/12.977848

High performance organic field-effect transistor with oxide/metal bilayer electrodes

Xinge Yu, Junsheng Yu, Wei Huang, Shijiao Han, Yadong Jiang

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO₃ between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO₃ interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO₃ interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices. © 2012 SPIE.

Original language	English
Title of host publication	Proceedings of SPIE
Subtitle of host publication	Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Editors	Yadong Jiang, Junsheng Yu, Zhifeng Wang
Publisher	SPIE
Volume	8419
ISBN (Print)	9780819491015
DOIs	https://doi.org/10.1117/12.977848
Publication status	Published - Apr 2012
Externally published	Yes
Event	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy - Xiamen, China Duration: 26 Apr 2012 → 29 Apr 2012

Conference

Conference	6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy
Place	China
City	Xiamen
Period	26/04/12 → 29/04/12

Research Keywords

Contact resistance
Injection barrier
MoO3 interlayer
Organic field-effect transistors

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10.1117/12.977848

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@inproceedings{29e4f10877324c5188176c975e057a8a,

title = "High performance organic field-effect transistor with oxide/metal bilayer electrodes",

abstract = "Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO3 between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO3 interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO3 interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices. {\textcopyright} 2012 SPIE.",

keywords = "Contact resistance, Injection barrier, MoO3 interlayer, Organic field-effect transistors",

author = "Xinge Yu and Junsheng Yu and Wei Huang and Shijiao Han and Yadong Jiang",

year = "2012",

month = apr,

doi = "10.1117/12.977848",

language = "English",

isbn = "9780819491015",

volume = "8419",

editor = "Jiang, {Yadong } and Yu, {Junsheng } and Wang, {Zhifeng }",

booktitle = "Proceedings of SPIE",

publisher = "SPIE",

address = "United States",

note = "6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy ; Conference date: 26-04-2012 Through 29-04-2012",

}

Yu, X, Yu, J, Huang, W, Han, S & Jiang, Y 2012, High performance organic field-effect transistor with oxide/metal bilayer electrodes. in Y Jiang, J Yu & Z Wang (eds), Proceedings of SPIE : Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy. vol. 8419, 84190E, SPIE, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, Xiamen, China, 26/04/12. https://doi.org/10.1117/12.977848

High performance organic field-effect transistor with oxide/metal bilayer electrodes. / Yu, Xinge; Yu, Junsheng; Huang, Wei et al.
Proceedings of SPIE : Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy. ed. / Yadong Jiang; Junsheng Yu; Zhifeng Wang. Vol. 8419 SPIE, 2012. 84190E.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - High performance organic field-effect transistor with oxide/metal bilayer electrodes

AU - Yu, Xinge

AU - Yu, Junsheng

AU - Huang, Wei

AU - Han, Shijiao

AU - Jiang, Yadong

PY - 2012/4

Y1 - 2012/4

N2 - Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO3 between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO3 interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO3 interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices. © 2012 SPIE.

AB - Pentacene organic field-effect transistors (OFETs) were fabricated by inserting a thin metallic oxide material MoO3 between pentacene and gold (Au) electrodes as an interlayer. Comparing with the corresponding single layer OFETs without any interlayer, theses OFETs with a thin MoO3 interlayer showed an obvious enhancement of hole mobility and slightly decrease of threshold voltage. The improvement of performance was investigated by interfacial energy level of the organic/metal interface, which showed that the MoO3 interlayer could significantly reduce the injection barrier between Au and pentacene. Moreover, the reduction of the injection barrier leads to a decrease of contact resistance at organic/metal interface, which improve the performance of the devices. © 2012 SPIE.

KW - Contact resistance

KW - Injection barrier

KW - MoO3 interlayer

KW - Organic field-effect transistors

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DO - 10.1117/12.977848

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 9780819491015

VL - 8419

BT - Proceedings of SPIE

A2 - Jiang, Yadong

A2 - Yu, Junsheng

A2 - Wang, Zhifeng

PB - SPIE

T2 - 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy

Y2 - 26 April 2012 through 29 April 2012

ER -

High performance organic field-effect transistor with oxide/metal bilayer electrodes

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