High-performance, fully transparent, and flexible zinc-doped indium oxide nanowire transistors

We report the fabrication of fully transparent and flexible nanowire transistors by combining a high-quality In2 O3:Zn nanowire channel, a SiNx high- κ dielectric, and conducting Sn-doped In2 O3 electrodes on a polyethylene terephthalate substrate. The devices show excellent operating characteristics with high carrier mobilities up to 631 cm2 V-1 s-1, a drain-source current on/off modulation ratio ∼1× 106, a high on-state current ∼1× 10-5 A, a small subthreshold gate voltage swing of 120 mV decade-1, and a near zero threshold voltage. The devices further show high reproducibility and stable performance under bending condition. The high-performance nanowire transistors would enable application opportunities in flexible and transparent electronics. © 2009 American Institute of Physics.