Abstract
An effective approach to significantly increase the electrical conductivity of a NiOx hole-transporting layer (HTL) to achieve high-efficiency planar heterojunction perovskite solar cells is demonstrated. Perovskite solar cells based on using Cu-doped NiOx HTL show a remarkably improved power conversion efficiency up to 15.40% due to the improved electrical conductivity and enhanced perovskite film quality. General applicability of Cu-doped NiOx to larger bandgap perovskites is also demonstrated in this study.
| Original language | English |
|---|---|
| Pages (from-to) | 695-701 |
| Journal | Advanced Materials |
| Volume | 27 |
| Issue number | 4 |
| Online published | 29 Nov 2014 |
| DOIs | |
| Publication status | Published - 27 Jan 2015 |
| Externally published | Yes |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Research Keywords
- Air-stability
- Copper doping
- Hole-transporting material
- Nickel oxide
- Perovskite solar cells
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