High-Performance Ammonia Plasma-Processed CsPbBr3 Perovskite Photodetectors

Zewen Lin; Zhenxu Lin; Jie Song; Rui Huang; Haixia Wu; Kaitao Chen; Li Xia; Yi Zhang; Hongliang Li; Yanqing Guo; Huihong Lin; Paul K. Chu

doi:10.1021/acsaelm.5c00374

High-Performance Ammonia Plasma-Processed CsPbBr₃ Perovskite Photodetectors

Zewen Lin (Co-first Author), Zhenxu Lin (Co-first Author), Jie Song (Co-first Author), Rui Huang^*, Haixia Wu, Kaitao Chen, Li Xia, Yi Zhang, Hongliang Li, Yanqing Guo, Huihong Lin, Paul K. Chu^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

2 Citations (Scopus)

Abstract

The pursuit of defect-suppressed metal halide perovskite films with optimal optoelectronic properties remains a persistent challenge in semiconductor device engineering. In this study, the effects of NH₃ plasma on the fabrication of high-quality CsPbBr₃ perovskite films are evaluated systematically. NH₃ plasma generates NH2 and NH species, which enhance grain growth and reduce defect states. As a result, the trap density decreases significantly from 7.9 × 10¹² cm^–3 to 6.8 × 10¹¹ cm^–3, improving CsPbBr₃ film quality. The photodetector assembled with the NH₃ plasma-processed CsPbBr₃ film delivers outstanding performance, including a responsivity of 62.7 A/W, detectivity of 7.7 × 10¹² Jones, ultrafast response time of 0.1/0.3 ms, and exceptional stability, all of which surpass the metrics of the non-plasma-treated device. These findings offer a promising solution for enhancing the quality of CsPbBr₃ perovskite films, thereby improving the properties of optoelectronic devices. © 2025 American Chemical Society

Original language	English
Pages (from-to)	5404-5411
Journal	ACS Applied Electronic Materials
Volume	7
Issue number	12
Online published	11 Jun 2025
DOIs	https://doi.org/10.1021/acsaelm.5c00374
Publication status	Published - 24 Jun 2025

Funding

The authors would like to acknowledge the support of the Guangdong Basic and Applied Basic Research Foundation, Research Projects of the Department of Education of Guangdong Province (2021ZDJS039, 2024ZDZX1026), Guangdong Basic and Applied Basic Research Foundation (2024A1515012339), City University of Hong Kong Donation Research Grants (9220061 and DON-RMG 9229021), Program of Hanshan Normal University (XTP202402), and College Students’ Innovation and Entrepreneurship Training Program (202110578008 and S202310578021).

Research Keywords

Chemical vapor deposition
CsPbBr3 films
Plasma
NH3
Photoconductors
Photodetectors.

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RGC-funded

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@article{8f7dd14048654cab9b1613fdbcae5ccd,

title = "High-Performance Ammonia Plasma-Processed CsPbBr3 Perovskite Photodetectors",

abstract = "The pursuit of defect-suppressed metal halide perovskite films with optimal optoelectronic properties remains a persistent challenge in semiconductor device engineering. In this study, the effects of NH3 plasma on the fabrication of high-quality CsPbBr3 perovskite films are evaluated systematically. NH3 plasma generates NH2 and NH species, which enhance grain growth and reduce defect states. As a result, the trap density decreases significantly from 7.9 × 1012 cm–3 to 6.8 × 1011 cm–3, improving CsPbBr3 film quality. The photodetector assembled with the NH3 plasma-processed CsPbBr3 film delivers outstanding performance, including a responsivity of 62.7 A/W, detectivity of 7.7 × 1012 Jones, ultrafast response time of 0.1/0.3 ms, and exceptional stability, all of which surpass the metrics of the non-plasma-treated device. These findings offer a promising solution for enhancing the quality of CsPbBr3 perovskite films, thereby improving the properties of optoelectronic devices. {\textcopyright} 2025 American Chemical Society",

keywords = "Chemical vapor deposition, CsPbBr3 films, Plasma, NH3, Photoconductors, Photodetectors.",

author = "Zewen Lin and Zhenxu Lin and Jie Song and Rui Huang and Haixia Wu and Kaitao Chen and Li Xia and Yi Zhang and Hongliang Li and Yanqing Guo and Huihong Lin and Chu, {Paul K.}",

year = "2025",

month = jun,

day = "24",

doi = "10.1021/acsaelm.5c00374",

language = "English",

volume = "7",

pages = "5404--5411",

number = "12",

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TY - JOUR

T1 - High-Performance Ammonia Plasma-Processed CsPbBr3 Perovskite Photodetectors

AU - Lin, Zewen

AU - Lin, Zhenxu

AU - Song, Jie

AU - Huang, Rui

AU - Wu, Haixia

AU - Chen, Kaitao

AU - Xia, Li

AU - Zhang, Yi

AU - Li, Hongliang

AU - Guo, Yanqing

AU - Lin, Huihong

AU - Chu, Paul K.

PY - 2025/6/24

Y1 - 2025/6/24

N2 - The pursuit of defect-suppressed metal halide perovskite films with optimal optoelectronic properties remains a persistent challenge in semiconductor device engineering. In this study, the effects of NH3 plasma on the fabrication of high-quality CsPbBr3 perovskite films are evaluated systematically. NH3 plasma generates NH2 and NH species, which enhance grain growth and reduce defect states. As a result, the trap density decreases significantly from 7.9 × 1012 cm–3 to 6.8 × 1011 cm–3, improving CsPbBr3 film quality. The photodetector assembled with the NH3 plasma-processed CsPbBr3 film delivers outstanding performance, including a responsivity of 62.7 A/W, detectivity of 7.7 × 1012 Jones, ultrafast response time of 0.1/0.3 ms, and exceptional stability, all of which surpass the metrics of the non-plasma-treated device. These findings offer a promising solution for enhancing the quality of CsPbBr3 perovskite films, thereby improving the properties of optoelectronic devices. © 2025 American Chemical Society

AB - The pursuit of defect-suppressed metal halide perovskite films with optimal optoelectronic properties remains a persistent challenge in semiconductor device engineering. In this study, the effects of NH3 plasma on the fabrication of high-quality CsPbBr3 perovskite films are evaluated systematically. NH3 plasma generates NH2 and NH species, which enhance grain growth and reduce defect states. As a result, the trap density decreases significantly from 7.9 × 1012 cm–3 to 6.8 × 1011 cm–3, improving CsPbBr3 film quality. The photodetector assembled with the NH3 plasma-processed CsPbBr3 film delivers outstanding performance, including a responsivity of 62.7 A/W, detectivity of 7.7 × 1012 Jones, ultrafast response time of 0.1/0.3 ms, and exceptional stability, all of which surpass the metrics of the non-plasma-treated device. These findings offer a promising solution for enhancing the quality of CsPbBr3 perovskite films, thereby improving the properties of optoelectronic devices. © 2025 American Chemical Society

KW - Chemical vapor deposition

KW - CsPbBr3 films

KW - Plasma

KW - NH3

KW - Photoconductors

KW - Photodetectors.

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U2 - 10.1021/acsaelm.5c00374

DO - 10.1021/acsaelm.5c00374

M3 - RGC 21 - Publication in refereed journal

SN - 2637-6113

VL - 7

SP - 5404

EP - 5411

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 12

ER -

High-Performance Ammonia Plasma-Processed CsPbBr₃ Perovskite Photodetectors

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Research Keywords

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DON_RMG: Fabrication, Characterization, and Properties of Functional Materials - RMGS

DON: Surface Modification and Fabrication of Advanced Materials

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