High mobility transparent amorphous CdO-In2O3 alloy films synthesized at room temperature

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

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Detail(s)

Original languageEnglish
Article number072108
Journal / PublicationApplied Physics Letters
Volume111
Issue number7
Publication statusPublished - 14 Aug 2017

Abstract

High mobility amorphous ionic oxide semiconductors (AIOSs) are ternary or quaternary heavy metal oxides which have been identified as technologically important materials for flexible transparent electronics because of their large area uniformity and low temperature processing compatibility. Here, we report on the room temperature synthesis of CdO-In2O3 alloy thin films in the full composition range using the magnetron sputtering technique on glass and plastic substrates. We found that alloys with a cation composition range of 10–55% Cd are amorphous with high mobility in the range of 30–45 cm2/Vs and an electron concentration of ∼3–4 x 1020 cm-3. The intrinsic and optical gap of these amorphous alloys varies from 2.7 to 3.2 eV and 3.2 to 3.4 eV, respectively. The room temperature processing, wide bandgap tunability, and low resistivity of ∼4–5 x10-4 Ω cm make these amorphous films among the best AIOSs as transparent electrodes on flexible substrates.