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High-loading homogeneous crosslinking enabled ultra-stable vertical organic electrochemical transistors for implantable neural interfaces

  • Lin Gao
  • , Qiang Zhang
  • , Yueping Lai
  • , Miao Xie
  • , Changjian Liu
  • , Dayong Zhang
  • , Yujie Peng
  • , Libing Bai
  • , Mengge Wu*
  • , Liang-Wen Feng*
  • , Wei Huang*
  • , Junsheng Yu*
  • , Xinge Yu*
  • *Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

Organic electrochemical transistors (OECTs) with high transconductance, low driving voltage, and biocompatibility have emerged as dominant bioelectronics technologies. However, a significant challenge remains in achieving stable signal recording over extended durations, due to the restricted thermal and cycling stability. Here, by introducing a small molecular with double-end functionalized trifluoromethyl-substituted diazirine (DtFDA) as the crosslinker in the organic mixed ionic-electronic conductors (OMIECs), both p- and n-type vertical OECT (vOECT) achieves excellent thermal adaptability (> 100 °C), excepti°nal cycling stability (> 200,000 cycles), fast ion transporting capability (transient time < 1 ms), along with ultrahigh maximum transconductance (gm) (> 0.34 S). The findings reveal that highly loaded crosslinkers (OMIEC:DtFDA = 1:1 in mass) triggered by ultraviolet can facilitate the formation of stable and homogeneous transistor channel, which holds lower crystallinity, wider d spacing, and face-on dominated packing, thereby leading to enhanced ion hydration/injection and decent carrier transport pathways. Moreover, in vivo brain recordings with stable signals were accessed from the developed ultraflexible vOECT even after a four-week interval, and the tissue biocompatibility was also validated by chronic epicortical implantation. This work signifies new possibilities for high-performance vOECTs with high fidelity signals recording under complicated operation environments, enabling broader implications for robust bioelectronics. © 2024 Elsevier Ltd
Original languageEnglish
Article number110062
JournalNano Energy
Volume129
Issue numberPart B
Online published29 Jul 2024
DOIs
Publication statusPublished - Oct 2024

Funding

This work is sponsored by the National Key Research and Development Program of China (Grant Nos. 2022YFE0134800 and 2023YFC2411800), the Regional Joint Fund of the National Science Foundation of China (Grant No. U21A20492), the National Natural Science Foundation of China (Grant Nos. 6227504, 62273073, 52273316 and 92163132), the Aeronautical Science Foundation of China (Grant No. 20230024080002), the Sichuan Science and Technology Program (Grant No. 2024YFHZ0354), the Chengdu Science and Technology Bureau (Grant No. 2023-YF06-00028-HZ), the Shenzhen Science and Technology Innovation Commission (Grant No. SGDX20220530111401011), the Innovation and Technology Fund of Innovation and Technology Commission (Grant No. ITS/119/22), the Sichuan Youth Software Innovation Project Funding (Grant No. MZGC20230068), This work is also sponsored by the Sichuan Province Key Laboratory of Display Science and Technology and Qiantang Science & Technology Innovation Center. L. Gao thanks the Academic Support Program for PhD students supported by UESTC.

Research Keywords

  • Cycling stability
  • High-loading crosslinking
  • Neural interfaces
  • Thermal stability
  • Vertical organic electrochemical transistors

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