Abstract
A phototransistor based on a chemical vapor deposited (CVD) MoS<sub>2</sub> monolayer exhibits a high photoresponsivity (2200 A W<sup>-1</sup>) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS <sub>2</sub>, decreasing the carrier mobility, photoresponsivity, and photogain. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
| Original language | English |
|---|---|
| Pages (from-to) | 3456-3461 |
| Journal | Advanced Materials |
| Volume | 25 |
| Issue number | 25 |
| DOIs | |
| Publication status | Published - 5 Jul 2013 |
| Externally published | Yes |
Bibliographical note
Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].Research Keywords
- ambient air
- molybdenum disulfides
- photogain
- phototransistors
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