High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites

Rui Dong; Yanjun Fang; Jungseok Chae; Jun Dai; Zhengguo Xiao; Qingfeng Dong; Yongbo Yuan; Andrea Centrone; Xiao Cheng Zeng; Jinsong Huang

doi:10.1002/adma.201405116

High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites

Rui Dong, Yanjun Fang, Jungseok Chae, Jun Dai, Zhengguo Xiao, Qingfeng Dong, Yongbo Yuan, Andrea Centrone, Xiao Cheng Zeng, Jinsong Huang^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

634 Citations (Scopus)

Abstract

Solution-processed organometal trihalide perovskite photodetectors show a high photoconductive gain of above 400 across the UV to NIR range at a very low bias of -1 V. The charge traps caused by large concentrations of Pb²⁺ cations at the top surface of the perovskite film are critical for achieving high gain in these devices via a trapped-hole-induced electron injection mechanism.

Original language	English
Pages (from-to)	1912-1918
Journal	Advanced Materials
Volume	27
Issue number	11
DOIs	https://doi.org/10.1002/adma.201405116
Publication status	Published - 18 Mar 2015
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

optoelectronics
organolead triiodide perovskites
photodetectors
solution processing

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title = "High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites",

abstract = "Solution-processed organometal trihalide perovskite photodetectors show a high photoconductive gain of above 400 across the UV to NIR range at a very low bias of -1 V. The charge traps caused by large concentrations of Pb2+ cations at the top surface of the perovskite film are critical for achieving high gain in these devices via a trapped-hole-induced electron injection mechanism.",

keywords = "optoelectronics, organolead triiodide perovskites, photodetectors, solution processing",

author = "Rui Dong and Yanjun Fang and Jungseok Chae and Jun Dai and Zhengguo Xiao and Qingfeng Dong and Yongbo Yuan and Andrea Centrone and Zeng, {Xiao Cheng} and Jinsong Huang",

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journal = "Advanced Materials",

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TY - JOUR

T1 - High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites

AU - Dong, Rui

AU - Fang, Yanjun

AU - Chae, Jungseok

AU - Dai, Jun

AU - Xiao, Zhengguo

AU - Dong, Qingfeng

AU - Yuan, Yongbo

AU - Centrone, Andrea

AU - Zeng, Xiao Cheng

AU - Huang, Jinsong

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2015/3/18

Y1 - 2015/3/18

N2 - Solution-processed organometal trihalide perovskite photodetectors show a high photoconductive gain of above 400 across the UV to NIR range at a very low bias of -1 V. The charge traps caused by large concentrations of Pb2+ cations at the top surface of the perovskite film are critical for achieving high gain in these devices via a trapped-hole-induced electron injection mechanism.

AB - Solution-processed organometal trihalide perovskite photodetectors show a high photoconductive gain of above 400 across the UV to NIR range at a very low bias of -1 V. The charge traps caused by large concentrations of Pb2+ cations at the top surface of the perovskite film are critical for achieving high gain in these devices via a trapped-hole-induced electron injection mechanism.

KW - optoelectronics

KW - organolead triiodide perovskites

KW - photodetectors

KW - solution processing

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U2 - 10.1002/adma.201405116

DO - 10.1002/adma.201405116

M3 - RGC 21 - Publication in refereed journal

SN - 0935-9648

VL - 27

SP - 1912

EP - 1918

JO - Advanced Materials

JF - Advanced Materials

IS - 11

ER -

High-Gain and Low-Driving-Voltage Photodetectors Based on Organolead Triiodide Perovskites

Abstract

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