High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications

Abhishek Pathak, Guan Ru Chiou, Narsinga Rao Gade, Muhammad Usman, Shruti Mendiratta, Tzuoo-Tsair Luo, Tien Wen Tseng, Jenq-Wei Chen, Fu-Rong Chen, Kuei-Hsien Chen*, Li-Chyong Chen*, Kuang-Lieh Lu*

*Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

29 Citations (Scopus)

Abstract

The self-assembly of a samarium-based metal-organic framework [Sm2(bhc)(H2O)6]n (1) in good yield was achieved by reacting Sm(NO3)3·6H2O with benzenehexacarboxylic acid (bhc) in a mixture of H2O-EtOH under hydrothermal conditions. A structural analysis showed that compound 1 crystallized in a space group of Pnmn and adopted a 3D structure with (4,8) connected nets. Temperature dependent dielectric measurements showed that compound 1 behaves as a high dielectric material with a high dielectric constant (κ = 45.1) at 5 kHz and 310 K, which is comparable to the values for some of the most commonly available dielectric inorganic metal oxides such as Sm2O3, Ta2O5, HfO2, and ZrO2. In addition, electrical measurements of 1 revealed an electrical conductivity of about 2.15 × 10-7 S/cm at a frequency of 5 kHz with a low leakage current (Ileakage = 8.13 × 10-12 Amm-2). Dielectric investigations of the Sm-based MOF provide an effective path for the development of high dielectric materials in the future.
Original languageEnglish
Pages (from-to)21872-21878
JournalACS Applied Materials and Interfaces
Volume9
Issue number26
Online published8 Jun 2017
DOIs
Publication statusPublished - 5 Jul 2017
Externally publishedYes

Research Keywords

  • dielectric
  • high-κ
  • hydrothermal
  • metal-organic framework
  • samarium

Fingerprint

Dive into the research topics of 'High-κ Samarium-Based Metal-Organic Framework for Gate Dielectric Applications'. Together they form a unique fingerprint.

Cite this