High Efficiency Ku-Band 13 W GaN HEMT HPA

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review

11 Scopus Citations
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Author(s)

Detail(s)

Original languageEnglish
Title of host publication2022 IEEE MTT-S International Wireless Symposium (IWS 2022) - Proceedings
PublisherInstitute of Electrical and Electronics Engineers, Inc.
Number of pages3
ISBN (electronic)9781665481977
ISBN (print)9781665485838
Publication statusPublished - 2022
Externally publishedYes

Publication series

NameIEEE MTT-S International Wireless Symposium, IWS - Proceedings

Conference

Title9th IEEE MTT-S International Wireless Symposium (IWS 2022)
PlaceChina
CityHarbin
Period12 - 15 August 2022

Abstract

This paper reports on a Ku-band high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) on 150-nm GaN-SiC high electron mobility transistor (HEMT) process, which exhibits high output power (13 W Psat) and high efficiency (45 % peak PAE) under pulse simulation with 100 μs period and 10 % duty cycle. By employing wideband matching networks (MNs), the proposed HPA achieves 39.2 ∼ 41.2 dBm Pout and 35.7% ∼ 45.4% PAE from 14.0 to 18.0 GHz. Power gain exceeds 17 dB in the operating band. The HPA chip dimensions are 2.55 mm by 1.3 mm. These results provide the potential for this HP A to be applied in satellite communications (SATCOM). © 2022 IEEE.

Research Area(s)

  • Gallium nitride, HEMTs, high power amplifiers, microwave amplifiers, MMICs, SATCOM

Citation Format(s)

High Efficiency Ku-Band 13 W GaN HEMT HPA. / Zhang, Jingyuan; Yan, Xu; Luo, Haorui et al.
2022 IEEE MTT-S International Wireless Symposium (IWS 2022) - Proceedings. Institute of Electrical and Electronics Engineers, Inc., 2022. (IEEE MTT-S International Wireless Symposium, IWS - Proceedings).

Research output: Chapters, Conference Papers, Creative and Literary WorksRGC 32 - Refereed conference paper (with host publication)peer-review