@inproceedings{86d14e94af894cbdab1dab91008eb078,
title = "High Efficiency Ku-Band 13 W GaN HEMT HPA",
abstract = "This paper reports on a Ku-band high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) on 150-nm GaN-SiC high electron mobility transistor (HEMT) process, which exhibits high output power (13 W Psat) and high efficiency (45 % peak PAE) under pulse simulation with 100 μs period and 10 % duty cycle. By employing wideband matching networks (MNs), the proposed HPA achieves 39.2 ∼ 41.2 dBm Pout and 35.7% ∼ 45.4% PAE from 14.0 to 18.0 GHz. Power gain exceeds 17 dB in the operating band. The HPA chip dimensions are 2.55 mm by 1.3 mm. These results provide the potential for this HP A to be applied in satellite communications (SATCOM). {\textcopyright} 2022 IEEE.",
keywords = "Gallium nitride, HEMTs, high power amplifiers, microwave amplifiers, MMICs, SATCOM",
author = "Jingyuan Zhang and Xu Yan and Haorui Luo and Yongxin Guo",
year = "2022",
doi = "10.1109/IWS55252.2022.9977587",
language = "English",
isbn = "9781665485838",
series = "IEEE MTT-S International Wireless Symposium, IWS - Proceedings",
publisher = "IEEE",
booktitle = "2022 IEEE MTT-S International Wireless Symposium (IWS 2022) - Proceedings",
address = "United States",
note = "9th IEEE MTT-S International Wireless Symposium (IWS 2022) ; Conference date: 12-08-2022 Through 15-08-2022",
}