High efficiency InAlN-based solar cells

R. E. Jones; R. Broesler; K. M. Yu; J. W. Ager; E. E. Haller; W. Walukiewicz; X. Chen; W. J. Schaff

doi:10.1109/PVSC.2008.4922884

High efficiency InAlN-based solar cells

R. E. Jones, R. Broesler, K. M. Yu, J. W. Ager, E. E. Haller, W. Walukiewicz, X. Chen, W. J. Schaff

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

4 Citations (Scopus)

Abstract

The band gap energies of the In_1-xAl_xN alloys are continuously tunable across the solar spectrum, making them good candidates for high efficiency solar cells. In particular, multijunction solar cells could be fabricated entirely from different compositions of this one alloy system. From modeling experimental measurements of the optical absorption coefficient in alloys with 0 ≤ × ≤ 0.6, a band gap bowing parameter of 4.8 ± 0.5 eV is found for the alloy system. With this number, the alloy compositions for two and three junction tandem cells with maximum theoretical power conversion efficiencies can be determined. Two junction InAlN / Si solar cells are also promising structures for high efficiency solar cells, due to the properties of the interface between n-type InAlN and p-type Si, as well as the band gaps of the respective materials. The theoretical efficiency (detailed balance) for the In_0.60Al_0.40N / Si tandem cell is 41%. © 2008 IEEE.

Original language	English
Title of host publication	33rd IEEE Photovoltaic Specialists Conference
Subtitle of host publication	Conference Proceedings
Publisher	IEEE
Number of pages	4
ISBN (Electronic)	9781424416417
ISBN (Print)	978-1-4244-1640-0
DOIs	https://doi.org/10.1109/PVSC.2008.4922884
Publication status	Published - May 2008
Externally published	Yes
Event	33rd IEEE Photovoltaic Specialists Conference (PVSC 2008) - Manchester Grand Hyatt, San Diego, CA, United States Duration: 11 May 2008 → 16 May 2008

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Name
ISSN (Print)	0160-8371

Conference

Conference	33rd IEEE Photovoltaic Specialists Conference (PVSC 2008)
Place	United States
City	San Diego, CA
Period	11/05/08 → 16/05/08

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SDG 7 Affordable and Clean Energy

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@inproceedings{b12b346dbff24c24b7d61fd816b9c760,

title = "High efficiency InAlN-based solar cells",

abstract = "The band gap energies of the In1-xAlxN alloys are continuously tunable across the solar spectrum, making them good candidates for high efficiency solar cells. In particular, multijunction solar cells could be fabricated entirely from different compositions of this one alloy system. From modeling experimental measurements of the optical absorption coefficient in alloys with 0 ≤ × ≤ 0.6, a band gap bowing parameter of 4.8 ± 0.5 eV is found for the alloy system. With this number, the alloy compositions for two and three junction tandem cells with maximum theoretical power conversion efficiencies can be determined. Two junction InAlN / Si solar cells are also promising structures for high efficiency solar cells, due to the properties of the interface between n-type InAlN and p-type Si, as well as the band gaps of the respective materials. The theoretical efficiency (detailed balance) for the In0.60Al0.40N / Si tandem cell is 41%. {\textcopyright} 2008 IEEE.",

author = "Jones, {R. E.} and R. Broesler and Yu, {K. M.} and Ager, {J. W.} and Haller, {E. E.} and W. Walukiewicz and X. Chen and Schaff, {W. J.}",

year = "2008",

month = may,

doi = "10.1109/PVSC.2008.4922884",

language = "English",

isbn = "978-1-4244-1640-0",

publisher = "IEEE",

booktitle = "33rd IEEE Photovoltaic Specialists Conference",

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note = "33rd IEEE Photovoltaic Specialists Conference (PVSC 2008) ; Conference date: 11-05-2008 Through 16-05-2008",

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TY - GEN

T1 - High efficiency InAlN-based solar cells

AU - Jones, R. E.

AU - Broesler, R.

AU - Yu, K. M.

AU - Ager, J. W.

AU - Haller, E. E.

AU - Walukiewicz, W.

AU - Chen, X.

AU - Schaff, W. J.

PY - 2008/5

Y1 - 2008/5

N2 - The band gap energies of the In1-xAlxN alloys are continuously tunable across the solar spectrum, making them good candidates for high efficiency solar cells. In particular, multijunction solar cells could be fabricated entirely from different compositions of this one alloy system. From modeling experimental measurements of the optical absorption coefficient in alloys with 0 ≤ × ≤ 0.6, a band gap bowing parameter of 4.8 ± 0.5 eV is found for the alloy system. With this number, the alloy compositions for two and three junction tandem cells with maximum theoretical power conversion efficiencies can be determined. Two junction InAlN / Si solar cells are also promising structures for high efficiency solar cells, due to the properties of the interface between n-type InAlN and p-type Si, as well as the band gaps of the respective materials. The theoretical efficiency (detailed balance) for the In0.60Al0.40N / Si tandem cell is 41%. © 2008 IEEE.

AB - The band gap energies of the In1-xAlxN alloys are continuously tunable across the solar spectrum, making them good candidates for high efficiency solar cells. In particular, multijunction solar cells could be fabricated entirely from different compositions of this one alloy system. From modeling experimental measurements of the optical absorption coefficient in alloys with 0 ≤ × ≤ 0.6, a band gap bowing parameter of 4.8 ± 0.5 eV is found for the alloy system. With this number, the alloy compositions for two and three junction tandem cells with maximum theoretical power conversion efficiencies can be determined. Two junction InAlN / Si solar cells are also promising structures for high efficiency solar cells, due to the properties of the interface between n-type InAlN and p-type Si, as well as the band gaps of the respective materials. The theoretical efficiency (detailed balance) for the In0.60Al0.40N / Si tandem cell is 41%. © 2008 IEEE.

UR - http://www.scopus.com/inward/record.url?scp=84879715669&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84879715669&origin=recordpage

U2 - 10.1109/PVSC.2008.4922884

DO - 10.1109/PVSC.2008.4922884

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 978-1-4244-1640-0

BT - 33rd IEEE Photovoltaic Specialists Conference

PB - IEEE

T2 - 33rd IEEE Photovoltaic Specialists Conference (PVSC 2008)

Y2 - 11 May 2008 through 16 May 2008

ER -

High efficiency InAlN-based solar cells

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