High efficiency and stability of ink-jet printed quantum dot light emitting diodes

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

18 Scopus Citations
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Author(s)

  • Chaoyu Xiang
  • Longjia Wu
  • Zizhe Lu
  • Yanwei Wen
  • Yixing Yang
  • Wenyong Liu
  • Ting Zhang
  • Weiran Cao
  • Bin Shan
  • Xiaolin Yan
  • Lei Qian

Detail(s)

Original languageEnglish
Journal / PublicationNature Communications
Volume11
Online published2 Apr 2020
Publication statusPublished - 2020

Link(s)

Abstract

The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.

Research Area(s)

Citation Format(s)

High efficiency and stability of ink-jet printed quantum dot light emitting diodes. / Xiang, Chaoyu; Wu, Longjia; Lu, Zizhe; Li, Menglin; Wen, Yanwei; Yang, Yixing; Liu, Wenyong; Zhang, Ting; Cao, Weiran; Tsang, Sai-Wing; Shan, Bin; Yan, Xiaolin; Qian, Lei.

In: Nature Communications, Vol. 11, 2020.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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