High efficiency and stability of ink-jet printed quantum dot light emitting diodes
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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Original language | English |
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Journal / Publication | Nature Communications |
Volume | 11 |
Online published | 2 Apr 2020 |
Publication status | Published - 2020 |
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DOI | DOI |
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Attachment(s) | Documents
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Link to Scopus | https://www.scopus.com/record/display.uri?eid=2-s2.0-85082887977&origin=recordpage |
Permanent Link | https://scholars.cityu.edu.hk/en/publications/publication(21a0b1ee-5216-41fa-bdba-46ad0611235e).html |
Abstract
The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.
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Citation Format(s)
High efficiency and stability of ink-jet printed quantum dot light emitting diodes. / Xiang, Chaoyu; Wu, Longjia; Lu, Zizhe et al.
In: Nature Communications, Vol. 11, 2020.
In: Nature Communications, Vol. 11, 2020.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
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