High efficiency and stability of ink-jet printed quantum dot light emitting diodes

Chaoyu Xiang; Longjia Wu; Zizhe Lu; Menglin Li; Yanwei Wen; Yixing Yang; Wenyong Liu; Ting Zhang; Weiran Cao; Sai-Wing Tsang; Bin Shan; Xiaolin Yan; Lei Qian

doi:10.1038/s41467-020-15481-9

High efficiency and stability of ink-jet printed quantum dot light emitting diodes

Chaoyu Xiang^*, Longjia Wu, Zizhe Lu, Menglin Li, Yanwei Wen, Yixing Yang, Wenyong Liu, Ting Zhang, Weiran Cao, Sai-Wing Tsang, Bin Shan, Xiaolin Yan^*, Lei Qian^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

207 Citations (Scopus)

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Abstract

The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.

Original language	English
Journal	Nature Communications
Volume	11
Online published	2 Apr 2020
DOIs	https://doi.org/10.1038/s41467-020-15481-9
Publication status	Published - 2020

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title = "High efficiency and stability of ink-jet printed quantum dot light emitting diodes",

abstract = "The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.",

author = "Chaoyu Xiang and Longjia Wu and Zizhe Lu and Menglin Li and Yanwei Wen and Yixing Yang and Wenyong Liu and Ting Zhang and Weiran Cao and Sai-Wing Tsang and Bin Shan and Xiaolin Yan and Lei Qian",

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AU - Xiang, Chaoyu

AU - Wu, Longjia

AU - Lu, Zizhe

AU - Li, Menglin

AU - Wen, Yanwei

AU - Yang, Yixing

AU - Liu, Wenyong

AU - Zhang, Ting

AU - Cao, Weiran

AU - Tsang, Sai-Wing

AU - Shan, Bin

AU - Yan, Xiaolin

AU - Qian, Lei

PY - 2020

Y1 - 2020

N2 - The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.

AB - The low efficiency and fast degradation of devices from ink-jet printing process hinders the application of quantum dot light emitting diodes on next generation displays. Passivating the trap states caused by both anion and cation under-coordinated sites on the quantum dot surface with proper ligands for ink-jet printing processing reminds a problem. Here we show, by adapting the idea of dual ionic passivation of quantum dots, ink-jet printed quantum dot light emitting diodes with an external quantum efficiency over 16% and half lifetime of more than 1,721,000 hours were reported for the first time. The liquid phase exchange of ligands fulfills the requirements of ink-jet printing processing for possible mass production. And the performance from ink-jet printed quantum dot light emitting diodes truly opens the gate of quantum dot light emitting diode application for industry.

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U2 - 10.1038/s41467-020-15481-9

DO - 10.1038/s41467-020-15481-9

M3 - RGC 21 - Publication in refereed journal

C2 - 32242016

SN - 2041-1723

VL - 11

JO - Nature Communications

JF - Nature Communications

ER -

High efficiency and stability of ink-jet printed quantum dot light emitting diodes

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ITF: Improving Lifetime of Solution Processed Quantum-Dot Light-Emitting-Diodes with Novel Hyperthermal Hydrogen Cross-linking Method

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High efficiency and stability of ink-jet printed quantum dot light emitting diodes

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ITF: Improving Lifetime of Solution Processed Quantum-Dot Light-Emitting-Diodes with Novel Hyperthermal Hydrogen Cross-linking Method

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