TY - JOUR
T1 - High dose uranium ion implantation into silicon
AU - Brown, I. G.
AU - Galvin, J. E.
AU - Yu, K. M.
PY - 1988/6/1
Y1 - 1988/6/1
N2 - Implantation of uranium ions into silicon to a dose of 6 × 1016 atoms/cm2, with a maximum concentration of 6 × 1021 atoms/cm3, has been carried out at an ion mean energy of 157 keV. The implanted uranium content was measured by Rutherford backscattering and confirmed by a measurement of the alpha-particle activity of the buried uranium layer. The range and straggling of the uranium implant, and sputtering of the silicon target by uranium, were measured and are compared with theoretical estimates. © 1988.
AB - Implantation of uranium ions into silicon to a dose of 6 × 1016 atoms/cm2, with a maximum concentration of 6 × 1021 atoms/cm3, has been carried out at an ion mean energy of 157 keV. The implanted uranium content was measured by Rutherford backscattering and confirmed by a measurement of the alpha-particle activity of the buried uranium layer. The range and straggling of the uranium implant, and sputtering of the silicon target by uranium, were measured and are compared with theoretical estimates. © 1988.
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U2 - 10.1016/0168-583X(88)90455-7
DO - 10.1016/0168-583X(88)90455-7
M3 - RGC 21 - Publication in refereed journal
SN - 0168-583X
VL - 31
SP - 558
EP - 562
JO - Nuclear Inst. and Methods in Physics Research, B
JF - Nuclear Inst. and Methods in Physics Research, B
IS - 4
ER -