High dielectric AlN/Al2O3 composite powder using a plasma spray approach for microelectronics application

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Detail(s)

Original languageEnglish
Pages (from-to)455-459
Journal / PublicationJournal of Materials Science: Materials in Electronics
Volume10
Issue number5-6
Publication statusPublished - Jul 1999
Externally publishedYes

Abstract

Increasing demand for higher performance dielectric material for multi-layer ceramics packaging has led to the use of the AlN system due to its very high thermal conductivity and coefficient of expansion compatibility with silicon. This paper reports on a novel process method used to produce an AlN/Al2O3 composite powder system which can be subsequently tape cast as a dielectric substrate. The mixture of both Al2O3 and AlN was first mechanically alloyed and then spray-dried to obtain a suitable agglomerated powder that was subsequently plasma-sprayed, resulting in a fine micrometer level integrated composite powder. The two main criteria used to ascertain the optimal process parameters during plasma spraying were a high gamma/alpha Al2O3 phase ratio, which ensured that all the Al2O3 phase had melted during plasma spraying, and a minimal reduction in the AlN/Al2O3 ratio to ensure minimal change in the AlN during processing. For the plasma-sprayed composite powders, fully sintered ceramic tapes were produced attaining > 99.0% of the theoretical density after sintering at 1650 °C for 6 h, which yielded a thermal conductivity value of 32.0 W m-1 K-1.