TY - JOUR
T1 - High-density uniformly aligned silicon nanotip arrays and their enhanced field emission characteristics
AU - Bai, X. D.
AU - Zhi, C. Y.
AU - Liu, S.
AU - Wang, E. G.
AU - Wang, Z. L.
PY - 2003/1
Y1 - 2003/1
N2 - High-density (∼ 108/cm2), uniformly aligned silicon nanotip arrays are synthesized by a plasma-assisted hot-filament chemical vapor deposition process using mixed gases composed of hydrogen, nitrogen and methane. The silicon nanotips grow along 〈112〉, and are coated in situ with a ∼ 3 nm thick amorphous carbon film by increasing the methane concentration in the source gases. In comparison to the uncoated silicon nanotips arrays, the coated tips have enhanced field emission properties with a turn-on field of 1.6 V/μm (for 10 μA/cm2) and threshold field of 3 V/μm (for 10 mA/cm2), suggesting their potential applications for flat panel displays. © 2003 Elsevier Science Ltd. All rights reserved.
AB - High-density (∼ 108/cm2), uniformly aligned silicon nanotip arrays are synthesized by a plasma-assisted hot-filament chemical vapor deposition process using mixed gases composed of hydrogen, nitrogen and methane. The silicon nanotips grow along 〈112〉, and are coated in situ with a ∼ 3 nm thick amorphous carbon film by increasing the methane concentration in the source gases. In comparison to the uncoated silicon nanotips arrays, the coated tips have enhanced field emission properties with a turn-on field of 1.6 V/μm (for 10 μA/cm2) and threshold field of 3 V/μm (for 10 mA/cm2), suggesting their potential applications for flat panel displays. © 2003 Elsevier Science Ltd. All rights reserved.
KW - A. Semiconductor
KW - D. Electronic transport
UR - http://www.scopus.com/inward/record.url?scp=0037220620&partnerID=8YFLogxK
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0037220620&origin=recordpage
U2 - 10.1016/S0038-1098(02)00720-2
DO - 10.1016/S0038-1098(02)00720-2
M3 - RGC 21 - Publication in refereed journal
SN - 0038-1098
VL - 125
SP - 185
EP - 188
JO - Solid State Communications
JF - Solid State Communications
IS - 3-4
ER -