Abstract
A gain-boost class-C inverter that simultaneously targets high DC gain and wide output swing is proposed in this study. Unlike those of the traditional gain-boost class-C inverter, the input transistors of the proposed gain-boost circuit for the PMOS cascode circuit are n type, whereas those for the NMOS cascode circuit are p type. Consequently, the output swing of the proposed gain-boost class-C inverter is unrestricted by the gain-boost circuit, and thus, a wide output swing can be achieved. A self-cascode structure is also adopted for the gain-boost circuit, thereby allowing it to obtain high DC gain. When compared with the traditional gain-boost class-C inverter with the same input transistor size, power consumption, and load capacitance, simulation results show that the proposed gain-boost class-C inverter improves DC gain by over 35% and boost output swing by over 20%.
| Original language | English |
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| Title of host publication | International SoC Design Conference 2017 (ISOCC 2017) - PROCEEDINGS OF TECHNICAL PAPERS |
| Publisher | IEEE |
| Pages | 53-54 |
| ISBN (Print) | 9781538622858 |
| DOIs | |
| Publication status | Published - Nov 2017 |
| Event | 14th International SoC Design Conference (ISOCC 2017) - Grand Hilton Hotel, Seoul, Korea, Republic of Duration: 5 Nov 2017 → 8 Nov 2017 |
Conference
| Conference | 14th International SoC Design Conference (ISOCC 2017) |
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| Place | Korea, Republic of |
| City | Seoul |
| Period | 5/11/17 → 8/11/17 |
Research Keywords
- Class-C inverter
- Gain-boost
- High DC gain
- Low-voltage micro-power
- Wide output swing