TY - JOUR
T1 - High-Cycle Fatigue of Single-Crystal Silicon Thin Films
AU - Muhlstein, Christopher L.
AU - Brown, Stuart B.
AU - Ritchie, Robert O.
PY - 2001/12
Y1 - 2001/12
N2 - When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, fatigue can only take place in toughened solids, i.e., premature fatigue failure would not be expected in materials such as single crystal silicon. The results of this study, however, appear to be at odds with the current understanding of brittle material fatigue. Twelve thin-film (∼ 20 μm thick) single crystal silicon specimens were tested to failure in a controlled air environment 30 ± 0.1°C, 50 ± 2% relative humidity). Damage accumulation and failure of the notched cantilever beams were monitored electrically during the "fatigue life" test. Specimen lives ranged from about 10 s to 48 days, or 1 × 106 to 1 × 1011 cycles before failure over stress amplitudes ranging from approximately 4 to 10 GPa. A variety of mechanisms are discussed in light of the fatigue life data and fracture surface evaluation.
AB - When subjected to alternating stresses, most materials degrade, e.g., suffer premature failure, due to a phenomenon known as fatigue. It is generally accepted that in brittle materials, such as ceramics, fatigue can only take place in toughened solids, i.e., premature fatigue failure would not be expected in materials such as single crystal silicon. The results of this study, however, appear to be at odds with the current understanding of brittle material fatigue. Twelve thin-film (∼ 20 μm thick) single crystal silicon specimens were tested to failure in a controlled air environment 30 ± 0.1°C, 50 ± 2% relative humidity). Damage accumulation and failure of the notched cantilever beams were monitored electrically during the "fatigue life" test. Specimen lives ranged from about 10 s to 48 days, or 1 × 106 to 1 × 1011 cycles before failure over stress amplitudes ranging from approximately 4 to 10 GPa. A variety of mechanisms are discussed in light of the fatigue life data and fracture surface evaluation.
KW - Fatigue failure
KW - MEMS devices
KW - Single-crystal silicon
KW - Thin films
UR - https://www.scopus.com/pages/publications/0035624942
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0035624942&origin=recordpage
U2 - 10.1109/84.967383
DO - 10.1109/84.967383
M3 - RGC 21 - Publication in refereed journal
SN - 1057-7157
VL - 10
SP - 593
EP - 600
JO - Journal of Microelectromechanical Systems
JF - Journal of Microelectromechanical Systems
IS - 4
ER -