High-cycle fatigue and durability of polycrystalline silicon thin films in ambient air

C. L. Muhlstein, S. B. Brown, R. O. Ritchie

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

Abstract

To evaluate the long-term durability properties of materials for microelectromechanical systems (MEMS), the stress-life (S/N) cyclic fatigue behaviour of a 2-μm thick polycrystalline silicon film was evaluated in laboratory air using an electrostatically actuated notched cantilever beam resonator. A total of 28 specimens were tested for failure under high frequency (∼40 Khz) cyclic loads with lives ranging from about 10 s to 34 days (3 × 105 to 1.2 × 1011 cycles) over fully reversed, sinusoidal stress amplitudes varying from ∼2.0 to 4.0 GPa. The thin-film polycrystalline silicon cantilever beams exhibited a time-delayed failure that was accompanied by a continuous increase in the compliance of the specimen. This apparent cyclic fatigue effect resulted in an endurance strength, at greater than 109 cycles, of ∼2 Gpa, i.e. roughly one-half of the (single cycle) fracture strength. Based on experimental and numerical results, the fatigue process is attributed to a novel mechanism involving the environmentally-assisted cracking of the surface oxide film (termed reaction-layer fatigue). These results provide the most comprehensive, high-cycle, endurance data for designers of polysilicon micromechanical components available to date. © 2001 Elsevier Science B.V. All rights reserved.
Original languageEnglish
Pages (from-to)177-188
JournalSensors and Actuators, A: Physical
Volume94
Issue number3
Online published12 Oct 2001
DOIs
Publication statusPublished - 20 Nov 2001
Externally publishedYes

Research Keywords

  • Durability
  • Fatigue
  • MEMS
  • Polysilicon
  • Silicon
  • Stress-life

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