High current Si field emission devices with plasma passivation and HfC coating

M. R. Rakhshandehroo; S. W. Pang

doi:10.1109/IVMC.1998.728762

High current Si field emission devices with plasma passivation and HfC coating

M. R. Rakhshandehroo, S. W. Pang

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

Surface passivation effects on the emission characteristics of gated Si field emitters were studied by exposing the samples to a H₂ plasma for 2 min before testing. The H₂ plasma was generated at 2 mTorr with 50 W source power and flow rate of 20 sccm. No rf power was applied to the stage to avoid sputtering of emitter tips. The emission current at a gate voltage of 100 V increased from 152 to 278 μA and the turn-on voltage reduced from 32 to 26 V after H₂ passivation. Emitter tips were also coated with MoSi and HfC to improve their emission characteristics. At a gate voltage of 100 V, the emission current from an array of 100 tips increased from 230 μm for uncoated emitters to 268 μA for emitters coated with MoSi and 389 μA for samples coated with HfC.

Original language	English
Title of host publication	Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC
Publisher	IEEE
Pages	291-292
ISBN (Print)	0-7803-5096-0
DOIs	https://doi.org/10.1109/IVMC.1998.728762
Publication status	Published - 1998
Externally published	Yes
Event	Eleventh International Vacuum Microelectronics Conference, IVMC 1998 - Asheville, NC, USA Duration: 19 Jul 1998 → 24 Jul 1998

Conference

Conference	Eleventh International Vacuum Microelectronics Conference, IVMC 1998
City	Asheville, NC, USA
Period	19/07/98 → 24/07/98

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10.1109/IVMC.1998.728762

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@inproceedings{9fde7274ad7440b4b9dc755e417f7670,

title = "High current Si field emission devices with plasma passivation and HfC coating",

abstract = "Surface passivation effects on the emission characteristics of gated Si field emitters were studied by exposing the samples to a H2 plasma for 2 min before testing. The H2 plasma was generated at 2 mTorr with 50 W source power and flow rate of 20 sccm. No rf power was applied to the stage to avoid sputtering of emitter tips. The emission current at a gate voltage of 100 V increased from 152 to 278 μA and the turn-on voltage reduced from 32 to 26 V after H2 passivation. Emitter tips were also coated with MoSi and HfC to improve their emission characteristics. At a gate voltage of 100 V, the emission current from an array of 100 tips increased from 230 μm for uncoated emitters to 268 μA for emitters coated with MoSi and 389 μA for samples coated with HfC.",

author = "Rakhshandehroo, {M. R.} and Pang, {S. W.}",

year = "1998",

doi = "10.1109/IVMC.1998.728762",

language = "English",

isbn = "0-7803-5096-0",

pages = "291--292",

booktitle = "Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC",

publisher = "IEEE",

address = "United States",

note = "Eleventh International Vacuum Microelectronics Conference, IVMC 1998 ; Conference date: 19-07-1998 Through 24-07-1998",

}

High current Si field emission devices with plasma passivation and HfC coating. / Rakhshandehroo, M. R.; Pang, S. W.
Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC. IEEE, 1998. p. 291-292.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

TY - GEN

T1 - High current Si field emission devices with plasma passivation and HfC coating

AU - Rakhshandehroo, M. R.

AU - Pang, S. W.

PY - 1998

Y1 - 1998

N2 - Surface passivation effects on the emission characteristics of gated Si field emitters were studied by exposing the samples to a H2 plasma for 2 min before testing. The H2 plasma was generated at 2 mTorr with 50 W source power and flow rate of 20 sccm. No rf power was applied to the stage to avoid sputtering of emitter tips. The emission current at a gate voltage of 100 V increased from 152 to 278 μA and the turn-on voltage reduced from 32 to 26 V after H2 passivation. Emitter tips were also coated with MoSi and HfC to improve their emission characteristics. At a gate voltage of 100 V, the emission current from an array of 100 tips increased from 230 μm for uncoated emitters to 268 μA for emitters coated with MoSi and 389 μA for samples coated with HfC.

AB - Surface passivation effects on the emission characteristics of gated Si field emitters were studied by exposing the samples to a H2 plasma for 2 min before testing. The H2 plasma was generated at 2 mTorr with 50 W source power and flow rate of 20 sccm. No rf power was applied to the stage to avoid sputtering of emitter tips. The emission current at a gate voltage of 100 V increased from 152 to 278 μA and the turn-on voltage reduced from 32 to 26 V after H2 passivation. Emitter tips were also coated with MoSi and HfC to improve their emission characteristics. At a gate voltage of 100 V, the emission current from an array of 100 tips increased from 230 μm for uncoated emitters to 268 μA for emitters coated with MoSi and 389 μA for samples coated with HfC.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0032315682&origin=recordpage

U2 - 10.1109/IVMC.1998.728762

DO - 10.1109/IVMC.1998.728762

M3 - RGC 32 - Refereed conference paper (with host publication)

SN - 0-7803-5096-0

SP - 291

EP - 292

BT - Proceedings of the IEEE International Vacuum Microelectronics Conference, IVMC

PB - IEEE

T2 - Eleventh International Vacuum Microelectronics Conference, IVMC 1998

Y2 - 19 July 1998 through 24 July 1998

ER -

High current Si field emission devices with plasma passivation and HfC coating

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