High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • Wenyu Ji
  • Pengtao Jing
  • Wei Xu
  • Xi Yuan
  • Yunjun Wang
  • Jialong Zhao

Detail(s)

Original languageEnglish
Article number53106
Journal / PublicationApplied Physics Letters
Volume103
Issue number5
Publication statusPublished - 29 Jul 2013
Externally publishedYes

Abstract

Deep-blue, high color purity electroluminescence (EL) is demonstrated in an inverted light-emitting device using nontoxic ZnSe/ZnS core/shell quantum dots (QDs) as the emitter. The device exhibits moderate turn-on voltage (4.0 V) and color-saturated deep blue emission with a narrow full width at half maximum of ∼15 nm and emission peak at 441 nm. Their maximum luminance and current efficiency reach 1170 cd/m2 and 0.51 cd/A, respectively. The high performances are achieved through a ZnO nanoparticle based electron-transporting layer due to efficient electron injection into the ZnSe/ZnS QDs. Energy transfer processes between the ZnSe/ZnS QDs and hole-transporting materials are studied by time-resolved photoluminescence spectroscopy to understand the EL mechanism of the devices. These results provide a new guide for the fabrication of efficient deep-blue quantum dot light-emitting diodes and the realization of QD-based lighting sources and full-color panel displays. © 2013 AIP Publishing LLC.

Citation Format(s)

High color purity ZnSe/ZnS core/shell quantum dot based blue light emitting diodes with an inverted device structure. / Ji, Wenyu; Jing, Pengtao; Xu, Wei; Yuan, Xi; Wang, Yunjun; Zhao, Jialong; Jen, Alex K.-Y.

In: Applied Physics Letters, Vol. 103, No. 5, 53106, 29.07.2013.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal