High Bi content GaSbBi alloys

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • M. K. Rajpalke
  • W. M. Linhart
  • M. Birkett
  • J. Alaria
  • J. Kopaczek
  • R. Kudrawiec
  • T. S. Jones
  • M. J. Ashwin
  • T. D. Veal

Detail(s)

Original languageEnglish
Article number43511
Journal / PublicationJournal of Applied Physics
Volume116
Issue number4
Publication statusPublished - 28 Jul 2014
Externally publishedYes

Abstract

The epitaxial growth, structural, and optical properties of GaSb 1-xBix alloys have been investigated. The Bi incorporation into GaSb is varied in the range 0 <x <9.6% by varying the growth rate (0.31-1.33 μm h-1) at two growth temperatures (250 and 275 °C). The Bi content is inversely proportional to the growth rate, but with higher Bi contents achieved at 250 than at 275°C. A maximum Bi content of x=9.6% is achieved with the Bi greater than 99% substitutional. Extrapolating the linear variation of lattice parameter with Bi content in the GaSbBi films enabled a zinc blende GaBi lattice parameter to be estimated of 6.272 Å. The band gap at 300K of the GaSbBi epitaxial layers decreases linearly with increasing Bi content down to 410 ± 40 meV (3 μm) for x = 9.6%, corresponding to a reduction of ∼35 meV/%Bi. Photoluminescence indicates a band gap of 490 ± 5 meV at 15K for x = 9.6%. © 2014 Authors.

Citation Format(s)

High Bi content GaSbBi alloys. / Rajpalke, M. K.; Linhart, W. M.; Birkett, M.; Yu, K. M.; Alaria, J.; Kopaczek, J.; Kudrawiec, R.; Jones, T. S.; Ashwin, M. J.; Veal, T. D.

In: Journal of Applied Physics, Vol. 116, No. 4, 43511, 28.07.2014.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal