High Bi content GaSbBi alloys

M. K. Rajpalke; W. M. Linhart; M. Birkett; K. M. Yu; J. Alaria; J. Kopaczek; R. Kudrawiec; T. S. Jones; M. J. Ashwin; T. D. Veal

doi:10.1063/1.4891217

High Bi content GaSbBi alloys

M. K. Rajpalke, W. M. Linhart, M. Birkett, K. M. Yu, J. Alaria, J. Kopaczek, R. Kudrawiec, T. S. Jones, M. J. Ashwin, T. D. Veal

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

73 Citations (Scopus)

Abstract

The epitaxial growth, structural, and optical properties of GaSb _1-xBi_x alloys have been investigated. The Bi incorporation into GaSb is varied in the range 0 <x <9.6% by varying the growth rate (0.31-1.33 μm h^-1) at two growth temperatures (250 and 275 °C). The Bi content is inversely proportional to the growth rate, but with higher Bi contents achieved at 250 than at 275°C. A maximum Bi content of x=9.6% is achieved with the Bi greater than 99% substitutional. Extrapolating the linear variation of lattice parameter with Bi content in the GaSbBi films enabled a zinc blende GaBi lattice parameter to be estimated of 6.272 Å. The band gap at 300K of the GaSbBi epitaxial layers decreases linearly with increasing Bi content down to 410 ± 40 meV (3 μm) for x = 9.6%, corresponding to a reduction of ∼35 meV/%Bi. Photoluminescence indicates a band gap of 490 ± 5 meV at 15K for x = 9.6%. © 2014 Authors.

Original language	English
Article number	43511
Journal	Journal of Applied Physics
Volume	116
Issue number	4
DOIs	https://doi.org/10.1063/1.4891217
Publication status	Published - 28 Jul 2014
Externally published	Yes

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@article{696aba22c1b440f291fe9695833f5553,

title = "High Bi content GaSbBi alloys",

abstract = "The epitaxial growth, structural, and optical properties of GaSb 1-xBix alloys have been investigated. The Bi incorporation into GaSb is varied in the range 0 -1) at two growth temperatures (250 and 275 °C). The Bi content is inversely proportional to the growth rate, but with higher Bi contents achieved at 250 than at 275°C. A maximum Bi content of x=9.6% is achieved with the Bi greater than 99% substitutional. Extrapolating the linear variation of lattice parameter with Bi content in the GaSbBi films enabled a zinc blende GaBi lattice parameter to be estimated of 6.272 {\AA}. The band gap at 300K of the GaSbBi epitaxial layers decreases linearly with increasing Bi content down to 410 ± 40 meV (3 μm) for x = 9.6%, corresponding to a reduction of ∼35 meV/%Bi. Photoluminescence indicates a band gap of 490 ± 5 meV at 15K for x = 9.6%. {\textcopyright} 2014 Authors.",

author = "Rajpalke, {M. K.} and Linhart, {W. M.} and M. Birkett and Yu, {K. M.} and J. Alaria and J. Kopaczek and R. Kudrawiec and Jones, {T. S.} and Ashwin, {M. J.} and Veal, {T. D.}",

year = "2014",

month = jul,

day = "28",

doi = "10.1063/1.4891217",

language = "English",

volume = "116",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - High Bi content GaSbBi alloys

AU - Rajpalke, M. K.

AU - Linhart, W. M.

AU - Birkett, M.

AU - Yu, K. M.

AU - Alaria, J.

AU - Kopaczek, J.

AU - Kudrawiec, R.

AU - Jones, T. S.

AU - Ashwin, M. J.

AU - Veal, T. D.

PY - 2014/7/28

Y1 - 2014/7/28

N2 - The epitaxial growth, structural, and optical properties of GaSb 1-xBix alloys have been investigated. The Bi incorporation into GaSb is varied in the range 0 -1) at two growth temperatures (250 and 275 °C). The Bi content is inversely proportional to the growth rate, but with higher Bi contents achieved at 250 than at 275°C. A maximum Bi content of x=9.6% is achieved with the Bi greater than 99% substitutional. Extrapolating the linear variation of lattice parameter with Bi content in the GaSbBi films enabled a zinc blende GaBi lattice parameter to be estimated of 6.272 Å. The band gap at 300K of the GaSbBi epitaxial layers decreases linearly with increasing Bi content down to 410 ± 40 meV (3 μm) for x = 9.6%, corresponding to a reduction of ∼35 meV/%Bi. Photoluminescence indicates a band gap of 490 ± 5 meV at 15K for x = 9.6%. © 2014 Authors.

AB - The epitaxial growth, structural, and optical properties of GaSb 1-xBix alloys have been investigated. The Bi incorporation into GaSb is varied in the range 0 -1) at two growth temperatures (250 and 275 °C). The Bi content is inversely proportional to the growth rate, but with higher Bi contents achieved at 250 than at 275°C. A maximum Bi content of x=9.6% is achieved with the Bi greater than 99% substitutional. Extrapolating the linear variation of lattice parameter with Bi content in the GaSbBi films enabled a zinc blende GaBi lattice parameter to be estimated of 6.272 Å. The band gap at 300K of the GaSbBi epitaxial layers decreases linearly with increasing Bi content down to 410 ± 40 meV (3 μm) for x = 9.6%, corresponding to a reduction of ∼35 meV/%Bi. Photoluminescence indicates a band gap of 490 ± 5 meV at 15K for x = 9.6%. © 2014 Authors.

UR - http://www.scopus.com/inward/record.url?scp=84905860645&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84905860645&origin=recordpage

U2 - 10.1063/1.4891217

DO - 10.1063/1.4891217

M3 - RGC 21 - Publication in refereed journal

SN - 0021-8979

VL - 116

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 43511

ER -

High Bi content GaSbBi alloys

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