Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity

Mengxing Sun; Qiyi Fang; Dan Xie; Yilin Sun; Liu Qian; Jianlong Xu; Peng Xiao; Changjiu Teng; Weiwei Li; Tianling Ren; Yanfeng Zhang

doi:10.1007/s12274-017-1855-1

Heterostructured graphene quantum dot/WSe₂/Si photodetector with suppressed dark current and improved detectivity

Mengxing Sun, Qiyi Fang, Dan Xie, Yilin Sun, Liu Qian, Jianlong Xu, Peng Xiao, Changjiu Teng, Weiwei Li, Tianling Ren, Yanfeng Zhang

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

89 Citations (Scopus)

Abstract

A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe₂ obtained using physical vapor deposition. The high quality of the WSe₂/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 10⁷. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe₂/Si heterojunction exhibits a high responsivity of ∼ 707 mA·W^–1, short response time of 0.2 ms, and good specific detectivity of ∼ 4.51 × 10⁹ Jones. These properties suggest that the GQDs/WSe₂/Si heterojunction holds great potential for application in future high-performance photodetectors. [Figure not available: see fulltext.]. © 2017, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.

Original language	English
Pages (from-to)	3233-3243
Journal	Nano Research
Volume	11
Issue number	6
DOIs	https://doi.org/10.1007/s12274-017-1855-1
Publication status	Published - 1 Jun 2018
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to <a href="mailto:[email protected]">[email protected]</a>.

Funding

This work was supported by the National Natural Science Foundation of China (NSFC) (Nos. 51672154 and 51372130), MoST (No. 2016YFA0200200), Natural Science Foundation of Jiangsu Province (No. BK20160328), and Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (No. KF201517).

Research Keywords

graphene quantum dots
heterojunction
photodetector
Si
WSe2

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Cite this

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abstract = "A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of ∼ 707 mA·W–1, short response time of 0.2 ms, and good specific detectivity of ∼ 4.51 × 109 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high-performance photodetectors. [Figure not available: see fulltext.]. {\textcopyright} 2017, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.",

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AU - Xiao, Peng

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AU - Li, Weiwei

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AB - A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of ∼ 707 mA·W–1, short response time of 0.2 ms, and good specific detectivity of ∼ 4.51 × 109 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high-performance photodetectors. [Figure not available: see fulltext.]. © 2017, Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature.

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