Hetero-epitaxial growth of stoichiometry tunable Si1-xGex film via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process

Chuan-Jung Lin; Sung-Yen Wei; Chien-Chung Hsu; Sheng-Min Yu; Wen-Ching Sun; Tzer-Shen Lin; Fu-Rong Chen

doi:10.1039/c5ce00956a

Author(s)

Chuan-Jung Lin
Sung-Yen Wei
Chien-Chung Hsu
Sheng-Min Yu
Wen-Ching Sun
Tzer-Shen Lin

Detail(s)

Original language	English
Pages (from-to)	6269-6273
Journal / Publication	CrystEngComm
Volume	17
Issue number	33
Online published	14 Jul 2015
Publication status	Published - 7 Sept 2015
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1039/c5ce00956a Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84938921574&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(a00c3daf-00eb-481b-8141-57e81920b146).html

Abstract

A novel process of aluminum-induced solid-phase epitaxy (AI-SPE) is used to fabricate a hetero-epitaxial Si_1-xGe_x (epi-SiGe) film on an sc-Si (100) substrate at relatively low temperatures (lower than 450 °C) using a 1/4 × 4′′ wafer. The stoichiometry of Ge in the epi-SiGe film can be easily tuned in the AI-SPE process by controlling the annealing temperature and the Ge fraction (x) of the initial a-Si_1-xGe_x layer. The stoichiometry and epitaxial relationship of the epi-SiGe film were verified by grazing incidence X-ray diffraction (GI-XRD) and transmission electron microscopy (TEM). The AI-SPE mechanism is directly verified by in situ heating TEM. Based on the experimental results, it is concluded that the AI-SPE mechanism for the epi-SiGe film can be divided into four steps: (a) initial stage; (b) formation of a-Si_1-xGe_x free atoms and diffusion along Al grain boundaries to the sc-(100) substrate surface; (c) nucleation of crystalline Si_1-xGe_x at the surface of the sc-Si (100) substrate; and (d) crystal growth and layer exchange.

Citation Format(s)

[ RIS ] [ BibTeX ]

Hetero-epitaxial growth of stoichiometry tunable Si_1-xGe_x film via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process. / Lin, Chuan-Jung; Wei, Sung-Yen; Hsu, Chien-Chung et al.
In: CrystEngComm, Vol. 17, No. 33, 07.09.2015, p. 6269-6273.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Lin, C-J, Wei, S-Y, Hsu, C-C, Yu, S-M, Sun, W-C, Lin, T-S & Chen, F-R 2015, 'Hetero-epitaxial growth of stoichiometry tunable Si_1-xGe_x film via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process', CrystEngComm, vol. 17, no. 33, pp. 6269-6273. https://doi.org/10.1039/c5ce00956a

Lin, C.-J., Wei, S.-Y., Hsu, C.-C., Yu, S.-M., Sun, W.-C., Lin, T.-S., & Chen, F.-R. (2015). Hetero-epitaxial growth of stoichiometry tunable Si_1-xGe_x film via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process. CrystEngComm, 17(33), 6269-6273. https://doi.org/10.1039/c5ce00956a

Lin CJ, Wei SY, Hsu CC, Yu SM, Sun WC, Lin TS et al. Hetero-epitaxial growth of stoichiometry tunable Si_1-xGe_x film via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process. CrystEngComm. 2015 Sept 7;17(33):6269-6273. Epub 2015 Jul 14. doi: 10.1039/c5ce00956a

Lin, Chuan-Jung ; Wei, Sung-Yen ; Hsu, Chien-Chung et al. / Hetero-epitaxial growth of stoichiometry tunable Si_1-xGe_x film via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process. In: CrystEngComm. 2015 ; Vol. 17, No. 33. pp. 6269-6273.