Hetero-epitaxial growth of stoichiometry tunable Si1-xGex film via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review

5 Scopus Citations
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Author(s)

  • Chuan-Jung Lin
  • Sung-Yen Wei
  • Chien-Chung Hsu
  • Sheng-Min Yu
  • Wen-Ching Sun
  • Tzer-Shen Lin

Detail(s)

Original languageEnglish
Pages (from-to)6269-6273
Journal / PublicationCrystEngComm
Volume17
Issue number33
Early online date14 Jul 2015
Publication statusPublished - 7 Sep 2015
Externally publishedYes

Abstract

A novel process of aluminum-induced solid-phase epitaxy (AI-SPE) is used to fabricate a hetero-epitaxial Si1-xGex (epi-SiGe) film on an sc-Si (100) substrate at relatively low temperatures (lower than 450 °C) using a 1/4 × 4′′ wafer. The stoichiometry of Ge in the epi-SiGe film can be easily tuned in the AI-SPE process by controlling the annealing temperature and the Ge fraction (x) of the initial a-Si1-xGex layer. The stoichiometry and epitaxial relationship of the epi-SiGe film were verified by grazing incidence X-ray diffraction (GI-XRD) and transmission electron microscopy (TEM). The AI-SPE mechanism is directly verified by in situ heating TEM. Based on the experimental results, it is concluded that the AI-SPE mechanism for the epi-SiGe film can be divided into four steps: (a) initial stage; (b) formation of a-Si1-xGex free atoms and diffusion along Al grain boundaries to the sc-(100) substrate surface; (c) nucleation of crystalline Si1-xGex at the surface of the sc-Si (100) substrate; and (d) crystal growth and layer exchange.

Citation Format(s)

Hetero-epitaxial growth of stoichiometry tunable Si1-xGex film via a low temperature aluminium-induced solid phase epitaxy (AI-SPE) process. / Lin, Chuan-Jung; Wei, Sung-Yen; Hsu, Chien-Chung; Yu, Sheng-Min; Sun, Wen-Ching; Lin, Tzer-Shen; Chen, Fu-Rong.

In: CrystEngComm, Vol. 17, No. 33, 07.09.2015, p. 6269-6273.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalNot applicablepeer-review