Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Xinping Qu
  • Bingzong Li
  • Guoping Ru
  • Zhiguang Cu
  • Hongtao Xu
  • Hongxiang Mo
  • Jing Liu

Detail(s)

Original languageEnglish
Pages (from-to)641-645
Journal / PublicationActa Metallurgica Sinica (English Letters)
Volume11
Issue number5
Publication statusPublished - 1998
Externally publishedYes

Abstract

The effect of amorphous Si layer interposed between Co and Ti on CoSi2/Si heteroepitaxy was studied. Co/Si/Ti/Si multilayer structure was prepared by Ion Beam Sputtering. The solid phase reaction of multilayer was performed by rapid thermal annealing (RTA). The results show that CoSi2 film obtained by Co/Si/Ti/Si solid phase reaction has good epitaxial characteristic, excellent electric properties and thermal stability. It is found that during the low temperature annealing, ternary compound such as Co2Ti4O can be formed. It may act as diffusion barrier which favors the epitaxial growth of CoSi2 film on Si. The addition of an amorphous Si layer can reduce the consumption of the substrate Si during CoSi2 formation while good epitaxial characteristic of CoSi2 on Si is remained.

Citation Format(s)

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction. / Qu, Xinping; Li, Bingzong; Ru, Guoping; Cu, Zhiguang; Xu, Hongtao; Mo, Hongxiang; Liu, Jing; Paul, Chu.

In: Acta Metallurgica Sinica (English Letters), Vol. 11, No. 5, 1998, p. 641-645.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review