Heavy p-type doping of ZnSe thin films using Cu 2Se in pulsed laser deposition

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Xiaojun Zhang
  • Coleman X. Kronawitter
  • Zhixun Ma
  • Peter Y. Yu
  • Samuel S. Mao

Detail(s)

Original languageEnglish
Article number42107
Journal / PublicationApplied Physics Letters
Volume101
Issue number4
Publication statusPublished - 23 Jul 2012
Externally publishedYes

Abstract

Undoped, Cu-doped, Se-enriched, and Cu 2Se-doped ZnSe films have been grown on fused quartz substrates by pulsed laser deposition. While the other films are highly resistive, Cu 2Se-doped ZnSe films are p-type conducting with hole concentrations of ∼1.1 × 10 19 cm -3 and resistivities of ∼0.098 Ω cm (compared with previous reports of ∼1×10 18 cm -3 and ∼0.75 Ω cm). The exceptional heavy p-type doping of ZnSe films can be attributed to substitution of Zn atoms with Cu while limiting selenium-vacancy-associated compensating defects with additional selenium. This work is of importance to solve doping difficulties and contact problems of wide-bandgap semiconductors. © 2012 American Institute of Physics.

Citation Format(s)

Heavy p-type doping of ZnSe thin films using Cu 2Se in pulsed laser deposition. / Zhang, Xiaojun; Man Yu, Kin; Kronawitter, Coleman X.; Ma, Zhixun; Yu, Peter Y.; Mao, Samuel S.

In: Applied Physics Letters, Vol. 101, No. 4, 42107, 23.07.2012.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review