Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

33 Scopus Citations
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Author(s)

  • Der-Hsien Lien
  • Yu-Hsuan Hsiao
  • Shih-Guo Yang
  • Meng-Lin Tsai
  • Tzu-Chiao Wei
  • Si-Chen Lee

Detail(s)

Original languageEnglish
Pages (from-to)104-109
Journal / PublicationNano Energy
Volume11
Online published28 Oct 2014
Publication statusPublished - Jan 2015
Externally publishedYes

Abstract

Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.

Research Area(s)

  • GaN, Harsh electronics, Quantum well, Solar cell

Citation Format(s)

Harsh photovoltaics using InGaN/GaN multiple quantum well schemes. / Lien, Der-Hsien; Hsiao, Yu-Hsuan; Yang, Shih-Guo; Tsai, Meng-Lin; Wei, Tzu-Chiao; Lee, Si-Chen; He, Jr-Hau.

In: Nano Energy, Vol. 11, 01.2015, p. 104-109.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review