H 原子吸附对 Si(113) 表面的影响

Ruiqin 张瑞勤; null 吴汲安; null 邢益荣

H 原子吸附对 Si(113) 表面的影响

Translated title of the contribution: Influence of hydrogen adsorption on Si(113) surface

张瑞勤, 吴汲安, 邢益荣

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

A semiempirical molecular orbital method of AM₁ was employed to study the clean and hydrogen adsorbed Si(113) surfaces using atomic cluster models of Si₁₆H₂₁ and HSi₁₆H₂₁, or H₂Si₁₆H₂₁ respectively. The calculations of formation heats suggest that a Si-H₂ adsorption is easier to be formed than a Si-H adsorption. The forces on surface atoms show the tendencies of the surface atomic reconstructions. With these results, discussions on some recent experimental results and suggestion to the Si(113) surface atomic reconstruction model are also presented.

Translated title of the contribution	Influence of hydrogen adsorption on Si(113) surface
Original language	Chinese (Simplified)
Pages (from-to)	815-819
Journal	半导体学报
Volume	16
Issue number	11
Publication status	Published - Nov 1995
Externally published	Yes

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@article{449c4ec2710b4aa2a01b9744968e0398,

title = "H 原子吸附对 Si(113) 表面的影响",

abstract = "本文采用半经验分子轨道理论方法 AM1 研究用 Si16H21 模拟的 Si(113) 高指数表面及其吸附Ｈ原子的体系，得到生成热和表面原子上受力随吸附的变化．从生成热分析得知，Si(113) 表面上形成 Si-H2 吸附比 Si-H 容易，且为放热吸附；受力分析指出了表面原子再构发生的趋向，而吸附则引起趋向改变．",

author = "张瑞勤 and 吴汲安 and 邢益荣",

note = "Publication information for this record has been verified with the author(s) concerned.",

year = "1995",

month = nov,

language = "繁体中文",

volume = "16",

pages = "815--819",

journal = "半导体学报",

issn = "0253-4177",

publisher = "Kexue Chubaneshe/Science Press",

number = "11",

}

TY - JOUR

T1 - H 原子吸附对 Si(113) 表面的影响

AU - 张瑞勤, null

AU - 吴汲安, null

AU - 邢益荣, null

N1 - Publication information for this record has been verified with the author(s) concerned.

PY - 1995/11

Y1 - 1995/11

N2 - 本文采用半经验分子轨道理论方法 AM1 研究用 Si16H21 模拟的 Si(113) 高指数表面及其吸附Ｈ原子的体系，得到生成热和表面原子上受力随吸附的变化．从生成热分析得知，Si(113) 表面上形成 Si-H2 吸附比 Si-H 容易，且为放热吸附；受力分析指出了表面原子再构发生的趋向，而吸附则引起趋向改变．

AB - 本文采用半经验分子轨道理论方法 AM1 研究用 Si16H21 模拟的 Si(113) 高指数表面及其吸附Ｈ原子的体系，得到生成热和表面原子上受力随吸附的变化．从生成热分析得知，Si(113) 表面上形成 Si-H2 吸附比 Si-H 容易，且为放热吸附；受力分析指出了表面原子再构发生的趋向，而吸附则引起趋向改变．

UR - http://www.scopus.com/inward/record.url?scp=0029406544&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0029406544&origin=recordpage

M3 - RGC 21 - Publication in refereed journal

SN - 0253-4177

VL - 16

SP - 815

EP - 819

JO - 半导体学报

JF - 半导体学报

IS - 11

ER -

H 原子吸附对 Si(113) 表面的影响

Abstract

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