Guidelines for accurate evaluation of photodetectors based on emerging semiconductor technologies

53 authors, including; Vincenzo Pecunia; Thomas D. Anthopoulos; Johnny C. Ho

doi:10.1038/s41566-025-01759-1

Guidelines for accurate evaluation of photodetectors based on emerging semiconductor technologies

53 authors, including
, Vincenzo Pecunia^*
, Thomas D. Anthopoulos^*
, Johnny C. Ho

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

81 Citations (Scopus)

Abstract

Photodetector technologies based on emerging semiconductors—for example, organic semiconductors, halide perovskites, quantum dots, low-dimensional semiconductors and metal oxides—hold considerable promise for next-generation optoelectronics. However, the breadth and multidisciplinarity of this field, alongside its diverse range of applications, have resulted in inconsistent performance characterization and reporting practices, hindering the effective benchmarking of these technologies. Here we present a consensus among researchers from academia and industry on accurately capturing the key performance metrics of photodetectors based on emerging semiconductors and utilizing the photoelectric effect. We analyse their underlying assumptions, discuss common misunderstandings, and provide guidelines for accurate characterization and reporting. Additionally, we discuss the benchmarking of these photodetector technologies with respect to diverse applications. We expect that these comprehensive guidelines for characterization, reporting and benchmarking will accelerate and streamline further advancements in the field, propelling emerging photodetector technologies towards their full potential. © The Author(s), under exclusive licence to Springer Nature Limited 2025.

Original language	English
Pages (from-to)	1178-1188
Number of pages	12
Journal	Nature Photonics
Volume	19
Issue number	11
Online published	3 Nov 2025
DOIs	https://doi.org/10.1038/s41566-025-01759-1
Publication status	Published - Nov 2025

Funding

V.P. acknowledges funding support from Simon Fraser University, the Natural Sciences and Engineering Research Council of Canada (NSERC) and the Canada Foundation for Innovation (CFI). T.D.A. acknowledges financial support from UK Research and Innovation (UKRI) and European Research Council (ERC), grant reference number EP/Z534006/1. A.C.-G. acknowledges funding from the Ministry of Science and Innovation (Spain) (PDC2023-145920-I00 and PID2023-151946OB-I00). Y.C. acknowledges funding support from the National Key R&D Program of China (2022YFB4200400). C.C. acknowledges funding support from Mitacs. X.F. acknowledges funding support from the National Natural Science Foundation of China (number 52425308). G.H.-S. acknowledges support from the Deutsche Forschungsgemeinschaft (DFG, German Research Foundation) through grant number HE 7056/6-1 and Heisenberg-Professorship HE 7056/7-1. M.C.H. acknowledges support from the National Science Foundation (NSF) Assessing and Predicting Technology Outcomes (APTO) programme (grant number TF-2404035). L.H. acknowledges funding support from the Agence Nationale de la Recherche (DETECT project number ANR-23-CE24-0001) and the Region Nouvelle Aquitaine (OVERPRINT project number AAPR2024-2023-31782910). J.C.H. acknowledges support from a fellowship award by the Research Grants Council of the Hong Kong Special Administrative Region, China (CityURFS2021-1S04). H.J.K. acknowledges support from the National Research Foundation of Korea (NRF) grant funded by the Korean government (MSIT) (number RS-2023-00256917). G.K. acknowledges support from the ERC under the European Union\u2019s Horizon 2020 research and innovation programme (grant agreement number 101002306), the Fundaci\u00F3 Privada Cellex, and the programme CERCA. J.L. acknowledges the University College London (UCL) Higher Education Innovation Fund KEI2024-01-34 HEIF for financial support. M.C.L. acknowledges support from the German Ministry of Education and Research (BMBF) through the project ATIQ (13N16116 and 13N16130). E. Lhuillier acknowledges support from the ERC grant AQDtive (grant number 101086358) and from French National Research Agency (ANR) through the grants Bright (ANR-21-CE24-0012-02), DIRAC (ANR-24-ASM1-0001), camIR (ANR-24-CE42-2757) and Piquant (ANR-24-CE09-0786). E. Lidorikis acknowledges funding support from EU Horizon Project ‘AMBROSIA’ (number 101093166). M.A.L. acknowledges support from the European Research Council with the ERC Advanced Grant, DEOM (101055097). T.M. acknowledges support from the European Union (grant agreement number 785219 Graphene Flagship). B.N. acknowledges funding support from Simon Fraser University and the Natural Sciences and Engineering Research Council of Canada (NSERC). T.N.N. acknowledges support from USA National Science Foundation grants ECCS-2318990, CNS-2312715 and CNS-2408393. T.-Q.N. acknowledges support from the Mitsubishi Chemical Center for Advanced Materials at the University of California Santa Barbara and thanks H. M. Luong from Chulalongkorn University for suggestions and comments. P. Samorì acknowledges support from the Agence Nationale de la Recherche through the Interdisciplinary Thematic Institute SysChem via the IdEx Unistra (ANR-10-IDEX-0002) within the programme Investissement d’Avenir, and the Institut Universitaire de France (IUF). P. Sonar acknowledges support from the Australian Research Council grants DP210103006 & DP230101666. S.D.S. acknowledges the Royal Society and Tata Group (UF150033 and URF\R\221026). K.V. acknowledges support from the ERC (grant agreement number 864625). S.W. acknowledges funding support from the Australian Research Council through projects DP240100145, CE230100006 and the Office of National Intelligence Project NI230100026. T.Y. acknowledges support from JST ASPIRE for Rising Scientists (JPMJAP2336). F.Z. acknowledges funding support from the Natural Science Foundation of Beijing (4232073) and the National Natural Science Foundation of China (62175011).

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title = "Guidelines for accurate evaluation of photodetectors based on emerging semiconductor technologies",

abstract = "Photodetector technologies based on emerging semiconductors—for example, organic semiconductors, halide perovskites, quantum dots, low-dimensional semiconductors and metal oxides—hold considerable promise for next-generation optoelectronics. However, the breadth and multidisciplinarity of this field, alongside its diverse range of applications, have resulted in inconsistent performance characterization and reporting practices, hindering the effective benchmarking of these technologies. Here we present a consensus among researchers from academia and industry on accurately capturing the key performance metrics of photodetectors based on emerging semiconductors and utilizing the photoelectric effect. We analyse their underlying assumptions, discuss common misunderstandings, and provide guidelines for accurate characterization and reporting. Additionally, we discuss the benchmarking of these photodetector technologies with respect to diverse applications. We expect that these comprehensive guidelines for characterization, reporting and benchmarking will accelerate and streamline further advancements in the field, propelling emerging photodetector technologies towards their full potential. {\textcopyright} The Author(s), under exclusive licence to Springer Nature Limited 2025.",

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AU - Armin, Ardalan

AU - Bouthinon, Benjamin

AU - Caironi, Mario

AU - Castellanos-Gomez, Andres

AU - Chen, Yongsheng

AU - Cho, Kilwon

AU - Clegg, Charlotte

AU - Fang, Xiaosheng

AU - Fendel, Peter

AU - Fowler, Boyd

AU - Gelinck, Gerwin

AU - Gottlob, Heinrich

AU - Guyot-Sionnest, Philippe

AU - Hannebauer, Rob

AU - Hernandez-Sosa, Gerardo

AU - Hersam, Mark C.

AU - Hirsch, Lionel

AU - Ho, Johnny C.

AU - Isikgor, Furkan H.

AU - Joimel, Jérôme

AU - Kim, Hyun Jae

AU - Konstantatos, Gerasimos

AU - Labram, John

AU - Lemme, Max C.

AU - Leo, Karl

AU - Lhuillier, Emmanuel

AU - Lidorikis, Elefterios

AU - Loi, Maria A.

AU - Malinowski, Pawel E.

AU - Merken, Patrick

AU - Mueller, Thomas

AU - Nasrollahi, Bahareh

AU - Natali, Dario

AU - Ng, Tse Nga

AU - Nguyen, Thuc-Quyen

AU - Park, Sung Kyu

AU - Peng, Lian-Mao

AU - Samorì, Paolo

AU - Sargent, Edward H.

AU - Shen, Liang

AU - Shishido, Sanshiro

AU - Shorubalko, Ivan

AU - Sonar, Prashant

AU - Stranks, Samuel D.

AU - Tedde, Sandro F.

AU - Vandewal, Koen

AU - Verhaegen, Marc

AU - Walia, Sumeet

PY - 2025/11

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AB - Photodetector technologies based on emerging semiconductors—for example, organic semiconductors, halide perovskites, quantum dots, low-dimensional semiconductors and metal oxides—hold considerable promise for next-generation optoelectronics. However, the breadth and multidisciplinarity of this field, alongside its diverse range of applications, have resulted in inconsistent performance characterization and reporting practices, hindering the effective benchmarking of these technologies. Here we present a consensus among researchers from academia and industry on accurately capturing the key performance metrics of photodetectors based on emerging semiconductors and utilizing the photoelectric effect. We analyse their underlying assumptions, discuss common misunderstandings, and provide guidelines for accurate characterization and reporting. Additionally, we discuss the benchmarking of these photodetector technologies with respect to diverse applications. We expect that these comprehensive guidelines for characterization, reporting and benchmarking will accelerate and streamline further advancements in the field, propelling emerging photodetector technologies towards their full potential. © The Author(s), under exclusive licence to Springer Nature Limited 2025.

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DO - 10.1038/s41566-025-01759-1

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IS - 11

ER -

Guidelines for accurate evaluation of photodetectors based on emerging semiconductor technologies

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Guidelines for accurate evaluation of photodetectors based on emerging semiconductor technologies

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RFS: Developing Negative-Capacitance Nanowire Transistor Arrays and Integrated Circuits for Next-Generation Flexible Electronics

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