Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • A. Fête
  • C. Cancellieri
  • D. Stornaiuolo
  • A. D. Caviglia
  • S. Gariglio
  • J. M. Triscone

Detail(s)

Original languageEnglish
Article number051604
Journal / PublicationApplied Physics Letters
Volume106
Issue number5
Publication statusPublished - 2 Feb 2015
Externally publishedYes

Abstract

We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈ 10 000 cm2 V-1s-1) and the lowest sheet carrier density (≈ 5 × 1012 cm-2). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900 °C) display carrier densities in the range of ≈ 2-5 × 1013 cm-2 and mobilities of ≈ 1000 cm 2 V-1s-1 at 4 K. Reducing their carrier density by field effect to 8 × 1012 cm-2 lowers their mobilities to ≈ 50 cm 2 V-1s-1 bringing the conductance to the weak-localization regime.

Citation Format(s)

Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface. / Fête, A.; Cancellieri, C.; Li, D.; Stornaiuolo, D.; Caviglia, A. D.; Gariglio, S.; Triscone, J. M.

In: Applied Physics Letters, Vol. 106, No. 5, 051604, 02.02.2015.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review