Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

14 Scopus Citations
View graph of relations

Author(s)

  • K. T. Chan
  • M. J. Lightner
  • G. A. Patterson
  • K. M. Yu

Detail(s)

Original languageEnglish
Pages (from-to)2022-2024
Journal / PublicationApplied Physics Letters
Volume56
Issue number20
Publication statusPublished - 1990
Externally publishedYes

Abstract

Strained GaAs/InGaAs/AlGaAs quantum well structures have been grown by molecular beam epitaxy at substrate temperatures from 375 to 510 °C. The well layer thickness and In composition are analyzed by ion channeling and particle-induced x-ray emission as a function of growth temperature. Test structures for modulation-doped field-effect transistors grown at 375 and 510 °C under two different As4 overpressures were also characterized by Van der Pauw measurements and low-temperature photoluminescence. The observed differences in film quality can be explained by the influence of substrate temperature and As4 flux on the cation surface mobility during growth of the InGaAs layer.

Citation Format(s)

Growth studies of pseudomorphic GaAs/InGaAs/AlGaAs modulation-doped field-effect transistor structures. / Chan, K. T.; Lightner, M. J.; Patterson, G. A.; Yu, K. M.

In: Applied Physics Letters, Vol. 56, No. 20, 1990, p. 2022-2024.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal