Abstract
Single-crystalline Ru O2 nanowires were grown by using a thermal evaporation method. A control of the sizes (width and length) and the length-to-width ratio of the nanowires were achieved by tuning the growth time. A transmission electron microscope-scanning tunneling microscope technique invoking one-nanocontact electrical characterization was adopted to determine the room-temperature resistivity (∼100 μ cm) of the nanowires. An e-beam lithography technique facilitating two-nanocontact measurements was performed to establish the metallic characteristic of individual nanowires. The authors found that a nanocontact may introduce high contact resistance, nonlinear current-voltage characteristics, and even semiconducting behavior in the temperature dependent resistance. © 2007 American Institute of Physics.
| Original language | English |
|---|---|
| Article number | 13105 |
| Journal | Applied Physics Letters |
| Volume | 90 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2007 |
| Externally published | Yes |
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