Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • W. W. Wu
  • K. C. Lu
  • C. W. Wang
  • H. Y. Hsieh
  • S. Y. Chen
  • Y. C. Chou
  • S. Y. Yu
  • L. J. Chen

Detail(s)

Original languageEnglish
Pages (from-to)3984-3989
Journal / PublicationNano Letters
Volume10
Issue number10
Publication statusPublished - 13 Oct 2010
Externally publishedYes

Abstract

Forming functional circuit components in future nanotechnology requires systematic studies of solid-state chemical reactions in the nanoscale. Here, we report efficient and unique methods, point and line contact reactions on Si nanowires, fabricating high quality and quantity of multiple nanoheterostructures of NiSi/Si and investigation of NiSi formation in nanoscale. By using the point contact reaction between several Ni nanodots and a Si nanowire carried out in situ in an ultrahigh vacuum transmission electron microscopy, multiple sections of single-crystal NiSi and Si with very sharp interfaces were produced in a Si nanowire. Owing to the supply limited point contact reaction, we propose that the nucleation and growth of the sugar cane-type NiSi grains start at the middle of the point contacts between two Ni nanodots and a Si nanowire. The reaction happens by the dissolution of Ni into the Si nanowire at the point contacts and by interstitial diffusion of Ni atoms within a Si nanowire. The growth of NiSi stops as the amount of Ni in the Ni nanodots is consumed. Additionally, without lithography, utilizing the line contact reaction between PS nanosphere-mediated Ni nanopatterns and a nanowire of Si, we have fabricated periodic multi-NiSi/Si/NiSi heterostructure nanonowires that may enhance the development of circuit elements in nanoscale electronic devices. Unlike the point contact reaction, silicide growth starts at the contact area in the line contact reaction; the different silicide formation modes resulting from point and line contact reactions are compared and analyzed. A mechanism on the basis of flux divergence is proposed for controlling the growth of the nano-multiheterostructures. © 2010 American Chemical Society.

Research Area(s)

  • in situ TEM, multiple nanoheterostructures, nanodots, nanopatterns, point contact reactions, Silicide nanowires

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.

Citation Format(s)

Growth of multiple metal/semiconductor nanoheterostructures through point and line contact reactions. / Wu, W. W.; Lu, K. C.; Wang, C. W.; Hsieh, H. Y.; Chen, S. Y.; Chou, Y. C.; Yu, S. Y.; Chen, L. J.; Tu, K. N.

In: Nano Letters, Vol. 10, No. 10, 13.10.2010, p. 3984-3989.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review